(Bi1.5Zn0.5)(Zn0.5Nb1.5)O7 (BZN) pyrochlore thin films were deposited onto both Pt/TiO2/SiO2/Si and polycrystalline alumina substrates using pulsed laser deposition technique and then post-annealed using rapid thermal processing. The deposition temperature varies from 300 °C to 600 °C, and all the BZN films showed cubic pyrochlore structure after annealing at 650 °C for 30 min in air. The influence of the substrate associated with crystal structure is significant in the as-deposited films and disappears after post-annealing. The dielectric properties as a function of frequency up to the microwave frequency in both films were measured by LCR meter and split-post dielectric resonator technique. It is found that the BZN film deposited at 400 °C and post-annealed at 650 °C shows excellent dielectric properties with low loss in the microwave frequency range. This result indicates that the BZN thin film is a potential microwave material.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.