The narrow bandgap of near-infrared (NIR) polymers is a major barrier to improving the performance of NIR phototransistors. The existing technique for overcoming this barrier is to construct a bilayer device (channel layer/bulk heterojunction (BHJ) layer). However, acceptor phases of the BHJ dissolve into the channel layer and are randomly distributed by the spin-coating method, resulting in turn-on voltages (Vo) and off-state dark currents remaining at a high level. In this work, a diffusion interface layer is formed between the channel layer and BHJ layer after treating the film transfer method (FTM)-based NIR phototransistors with solvent vapor annealing (SVA). The newly formed diffusion interface layer makes it possible to control the acceptor phase distribution. The performance of the FTM-based device improves after SVA. Vo decreases from 26 V to zero, and the dark currents decrease by one order of magnitude. The photosensitivity (Iph/Idark) increases from 22 to 1.7 × 107.
In phototransistors with bulk heterojunction, long conductive channels with tens-micrometers length supply the discontinuous phase morphology and unbalance charge transport, resulting in an obvious storage of photoinduced charges, however, the...
The Debye screening length L D is one of the key parameters for the fieldeffect channel geometry. However, to the best of our knowledge, there are little reports on the experimental estimation of L D . In this study, we have reported our recent observation of in situ surface-enhanced Raman scattering (SERS) mapping during the investigation of the operating organic field-effect transistors. Placing SERS enhancers in different positions of the device can obtain charge and potential information at different locations, which can help to analyze the spatial distribution of charge and quantitatively estimate the Debye screening length. The enhancing factor of Raman intensity that is testified somehow increases exponentially with the external electrical field in both experiments and theoretical calculations. The experimental estimated Debye screening length is from 6.5 to 3.6 nm when the gate voltage changed from −30 to −50 V. This value is larger than the traditional consideration that the Debye screening length is less than 1 nm, which is due to the presence of the light field and the corresponding photogenerated carriers distributed in the whole active layer. Besides, the charge trapping effect of SERS enhancers has been testified to introduce weak error during the accumulation mode with large current density. These conditions have well mimicked the working mode of phototransistors, which is of great significance for optimization of phototransistor performance.
Advanced or recurrent mucinous carcinoma of the ovary minimally responds to current cytotoxic treatments and has a poor prognosis. Despite multimodal treatment with chemotherapy and surgery, most patients ultimately progress and require palliative systemic therapy. Anti-HER2 therapy has been demonstrated to be an effective strategy for the treatment of HER2-positive breast cancer. However, the role of anti-HER2 therapy in ovarian cancer remains largely unknown. Here, we report the case of a young woman with FIGO Stage IIIc recurrent mucinous ovarian carcinoma (MOC) who developed trastuzumab resistance and disease progression following cross-treatment with trastuzumab combined with pertuzumab. HER2 amplification was discovered using next-generation sequencing (NGS). The patient then received bevacizumab, and pyrotinib (an irreversible HER2 antagonist) plus capecitabine treatment, and achieved a long-term clinical benefit for 22 months. Pyrotinib combined with bevacizumab is a potential treatment for MOC patients who are heavily pretreated and harbor a HER2 amplification. Our case may provide valuable treatment information for patients with advanced or recurrent MOC.
A fast photomultiplier photodetector with a broad/narrowband dual mode was implemented using a new 3D heterostructure based on embedded perovskite micro‐sized single crystals. Because the single‐crystal size is smaller than the electrode size, the active layer can be divided into the perovskite microcrystalline part for charge transport and the polymer‐embedded part for charge storage. This induces an additional radical interface in the 3D heterojunction structure, and allows the photogenerated built‐in electric field in radical direction, especially when the energy levels between the perovskite and embedding polymer are similar. This type of heterojunction has a small radial capacitance that can effectively reduce carrier quenching and accelerate the carrier response. By controlling the applied bias direction, up to 300–1000% external quantum efficiency (EQE) and microsecond response can be achieved not only in the wide range of ultraviolet to visible light from 320 nm to 550 nm, but also in the narrow‐band response with a full width at half minimum (FWHM) of 20 nm. This shows great potential for applications in integrated multifunctional photodetectors.This article is protected by copyright. All rights reserved
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