A simple and scalable scheme is proposed to generate a 𝑛-qubit 𝑊 state in a trapped-ion system without the Lamb-Dicke limit. The 𝑛-qubit 𝑊 state can be generated by the interaction between the ions and the laser field if the collective mode is initially prepared in the single-phonon state and each ion is in the ground state. The scheme only requires a single laser and avoids laser manipulation of the individual ion. The time required to complete the process decreases with the number of ions. The present scheme is not limited to small values of the LD parameter, which greatly enhances operation speeds.
A disorder hopping model for carriers recombination at organic/organic interface (OOI) in double-layer organic light emitting diodes (OLEDs) was presented. According to the structure of an OOI as well as spatial and energetic disorder of hopping states, it was more reasonable to use the disorder hopping model than to use the Fowler-Nordheim formalism. It was shown that the carriers hopping distance, the effective barrier height and the electric field contribution had heavy effects on recombination efficiency. Firstly, when the applied voltage was less than 19.5V (in double-layer OLEDs ITO/α-NPD/Alq3/Al), recombination efficiency increased with the increase of hopping distance, while the applied voltage was larger than 19.5V, it decreased with the increase of hopping distance; secondly, it also increased with the increase of effective barrier height at OOI; Finally, it increased with the increase of differences of electric field at OOI, while it decreased when the value of differences of electric field reached 24×105V/cm. These results were consistent with some experiments.
A scheme is presented for the teleportion of a Fock superposition state via a degenerate V-type three-level atom and two cavity fields Raman interaction.
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