The Embedded Atom Method is applied to study the properties of surface phonons of transition metal Cu. We derive the formula of surface lattice dynamical matrix from the se-miempirical functions. As an example, we calculate the surface phonon dispersions on Cu (100) surface; the calculated Raileigh phonon dispersion curve on Cu(100) along the direction ΓX is compared with that measured by electon-energy-loss-spectroscopy, and satifactory agreement is obtained.
The coarse particles theory, the fine particles theory and the bridge theory w ere used to calculate the absorption and scattering coefficients of the particle s separately according to their size compared with the light wavelength. The dif fuse reflectivity of the coating with the particles was obtained. The influences of the various parameters of the coating, such as the optical constants of the particles and the binder, the size and the volume fraction of the particles, on the diffuse reflectivity were discussed. Taking TiO2 as the example, the compu ter design method of visible light stealth coating is introduced.
A new system of Canter fractal models was created and studied, the density of states (DOS) as weLl as wavefunctions of the phonon in this kind ofstructure were calculated and discussed, in which it shows a new kind of branch rules for the DOS and new characteristics for the wavefunctions.
A 2D simulation of electrical and optical characteristics of InGaN/GaN multiple quantum well blue light-emitting diodes by APSYS software with a dot-well model and well model are investigated. It shows that I-V and electrical luminescence simulation results based on the quantum dot model are in better agreement with the experimental data than that based purely on quantum well model. Moreover, simulation result also suggest that the non-equilibrium quantum transport plays an important role in the InGaN/GaN multiple quantum well light-emitting diodes.
The far infrared reflection spectra of Hg1-xMnx Te with different composition in the temperature region of 4.2-300 K are reported. It is demonstrated that there are a gap mode as well as a local mode associated with impurity Mn in HgTe. The gap mode has a frequency of 97 cm-1. The theoretical analysis of the gap mode has been proceeded.
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