The high density of heat generated in power electronics and optoelectronic devices is a critical bottleneck in their application. New materials with high thermal conductivity are needed to effectively dissipate heat and thereby enable enhanced performance of power controls, solid-state lighting, communication, and security systems. We report the experimental discovery of high thermal conductivity at room temperature in cubic boron arsenide (BAs) grown through a modified chemical vapor transport technique. The thermal conductivity of BAs, 1000 ± 90 watts per meter per kelvin meter-kelvin, is higher than that of silicon carbide by a factor of 3 and is surpassed only by diamond and the basal-plane value of graphite. This work shows that BAs represents a class of ultrahigh-thermal conductivity materials predicted by a recent theory, and that it may constitute a useful thermal management material for high-power density electronic devices.

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Single crystals of Ga(OH)(C(8)H(4)O(4)).0.74C(8)H(6)O(4) (2) and Ga(OH,F)(C(8)H(4)O(4)).0.74C(8)H(6)O(4) (3) were obtained under hydrothermal conditions. The structures of 2 and 3 have the same topological framework as the previously reported aluminum 1,4-benzenedicarboxylate (BDC), Al(OH)(C(8)H(4)O(4)).0.7C(8)H(6)O(4) (1). The frameworks are built by interconnecting M-OH-M chains (M = Al, Ga) with BDC anions to form large diamond-shaped one-dimensional channels filled with additional H(2)BDC guest molecules occupying disordered positions in the channels. Upon removal of H(2)BDC, other guest molecules such as H(2)O and pyridine can be inserted. In this work, we present a study of the intercalation of aromatic guests (BDC and pyridine) into frameworks of 1-3 by liquid and vapor diffusion into the empty channels of 1 and by single-crystal-to-single-crystal solvothermal guest exchange for 2 and 3. In the case of Al(OH)BDC and Ga(OH,F)BDC, two interconvertible, guest-concentration-dependent phases with different orientations of the pyridine guests have been observed, while only one pyridine orientation is found in Ga(OH)BDC.

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A series of novel vanadium silicates with open-framework and microporous structures has been synthesized under mild hydrothermal conditions. Ten distinct framework types have been identified that all have structures based on cross-linking single silicate sheets with square pyramidal V(IV)O(5) units to give compounds with the general formula A(r)[(VO)(s)(Si(2)O(5))(p)(SiO(2))(q)].tH(2)O, where A is Na, K, Rb, Cs, or a combination. The vanadosilicate (VSH-n) structures have free channel diameters up to 6.5 A and show good thermal stability, absorption, and ion-exchange properties, suggesting their potential for technological applications as molecular sieves or in catalysis.