Flexible pressure sensors have aroused tremendous attention, owing to their broad applications in healthcare, robotics, and prosthetics. So far, it remains a critical challenge to develop low-cost and controllable microstructures for flexible pressure sensors. Herein, a high-sensitivity and low-cost flexible piezoresistive sensor was developed by combining a controllable graphene-nanowalls (GNWs) wrinkle and a polydimethylsiloxane (PDMS) elastomer. For the GNWs–PDMS bilayer, the vertically grown GNWs film can effectively improve the interface strength and form delamination-free conformal wrinkles. More importantly, a controllable microstructure can be easily tuned through the thermal wrinkling method. The wrinkled graphene-nanowalls (WG) piezoresistive sensor has a high sensitivity (S = 59.0 kPa–1 for the 0–2 kPa region and S = 4.8 kPa–1 for the 2–20 kPa region), a fast response speed (<6.9 ms), and a low limit of detection (LOD) of 2 mg (∼0.2 Pa). The finite element method was used to analyze the working mechanism of the sensor, which revealed that the periods of the wrinkles play a dominant role in the performances of the sensors. These prominent merits enable wrinkled graphene sensors to successfully detect various signals from a weak stimulus to large pressures, for example, the detection of weak gas and plantar pressure. Furthermore, object manipulation, tactile imaging, and braille recognition applications have been demonstrated, showing their great potential in prosthetics limbs and intelligent robotics.

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Silicon-based Schottky heterojunction photodetectors are promising due to their compatibility with the semiconductor process. However, the applications of these devices are usually limited to wavelengths shorter than 1.1 µm due to the low absorption of electrode materials at infrared. In this report, silicon-based compound semiconductor heterojunction photodetectors with graphene transparent electrodes are fabricated. Due to the high absorption of InSb at infrared, as well as the good transparency and excellent electrical conductivity of the graphene, the as-prepared photodetectors show a broadband photoresponse with high performance which includes a specific detectivity of 1.9 ×10 12 cm Hz 1/2 W −1 , responsivity of 132 mA W −1 , on/off ratio of 1 ×10 5 , rise time of 2 µs, 3 dB cut-off frequency of 172 kHz, and response wavelengths covering 635 nm, 1.55 µm and 2.7 µm. This report prove s that graphene as a transparent electrode has a great effect on the performance improvement of silicon-based compound semiconductor heterojunction photodetectors.