With the further miniaturization and integration of multi-dimensional optical information detection devices, polarization-sensitive photodetectors based on anisotropic low-dimension materials have attractive potential applications. However, the performance of these devices is restricted by intrinsic property of materials leading to a small polarization ratio of the detectors. Here, we construct a black phosphorus (BP) homojunction photodetector defined by ferroelectric domains with ultra-sensitive polarization photoresponse. With the modulation of ferroelectric field, the BP exhibits anisotropic dispersion changes, leading an increased photothermalelectric (PTE) current in the armchair (AC) direction. Moreover, the PN junction can promote the PTE current and accelerate carrier separation. As a result, the BP photodetector demonstrates an ultrahigh polarization ratio (PR) of 288 at 1450 nm incident light, a large photoresponsivity of 1.06 A/W, and a high detectivity of 1.27 × 1011 cmHz1/2W−1 at room temperature. This work reveals the great potential of BP in future polarized light detection.
New-generation infrared detectors call for higher operation temperature and polarization sensitivity. For traditional HgCdTe infrared detectors, the additional polarization optics and cryogenic cooling are necessary to achieve high-performance infrared polarization detection, while they can complicate this system and limit the integration. Here, a mixed-dimensional HgCdTe/black phosphorous van der Waals heterojunction photodiode is proposed for polarization-sensitive midwave infrared photodetection. Benefiting from van der Waals integration, type III broken-gap band alignment heterojunctions are achieved. Anisotropy optical properties of black phosphorous bring polarization sensitivity from visible light to midwave infrared without external optics. Our devices show an outstanding performance at room temperature without applied bias, with peak blackbody detectivity as high as 7.93 × 10 10 cm Hz 1/2 W −1 and average blackbody detectivity over 2.1 × 10 10 cm Hz 1/2 W −1 in midwave infrared region. This strategy offers a possible practical solution for next-generation infrared detector with high operation temperature, high performance, and multi-information acquisition.
tunneling transistor, [9] barristors, [10] flexible electronics, [11,12] and optoelectronic devices. [13] That vertically stacked architecture and atomic thickness are much more efficient for charge separation and transport, making 2D vdW heterostructures prospective building block to construct photodetectors. [4,[13][14][15] Besides all-2D heterojunctions, the dangling-bond-free surfaces of 2D materials also enable vdW interaction with different dimensional materials, forming mixed-dimensional vdW heterostructures. [16] Mixed-dimensional vdW heterostructures allow various selecting freedom of materials and may provide an effective method to compensate the intrinsic weakness of 2D crystals to realize their full potential. [17,18] For example, 1D/2D heterostructures may integrate the respective advantages of the two distinct materials, and therefore, improve device performance and even bring diversity and novelty. In this regard, some intriguing and extraordinary devices have been explored by combing the distinct properties from 1D and 2D materials. Sujay et al. used the natural size of singlewalled carbon nanotubes to prepare molybdenum disulfide (MoS 2 ) transistors with a 1 nm physical gate length, removing the need for any lithography or patterning processes that are challenging at these scale lengths. [1] Pyo et al. reported black phosphorus (BP) nanosheet−zinc oxide (ZnO) nanowire heterojunction application for BP-gated junction field effect transistors with n-ZnO channel for the first time. [19] Zhang et al. realized electrical control of spatial resolution in mixed-dimensional heterostructure photodetectors, combining the asymmetric geometry and the gate-tunable Fermi levels of carbon nanotube, tungsten diselenide (WSe 2 ), and graphene. [20] Researchers have used their experiments [1,2,11,12,[19][20][21][22][23][24][25][26][27][28][29][30][31][32] to verify that it is an essential issue to integrate functional nanomaterials with different dimensions together. The advantages of the mixed-dimensional heterostructures, such as great freedom of choosing materials and synergistic effect, will bring more opportunities to nanodevices.Here, we fabricated mixed-dimensional vdW heterostructure photodiodes composed of 1D Te nanowires and 2D MoTe 2 flakes. Te is a typical p-type narrow bandgap semiconductor (with a bandgap of ≈0.35 eV in bulk and ≈1 eV in monolayer) with a unique helical-chain conformation in its crystal structure. [33][34][35] The narrow bandgap and good air stability make Te has great potential in optoelectronic devices. [36] On the The dangling-bond-free surfaces of 2D materials enable them to possess various degrees of freedom to form heterostructures with non-2D materials. This allows for the combination of the advantages of different dimensional materials to fabricate van der Waals (vdW) heterostructures, thereby improving device performance and even bringing diversity and novelty. Herein, a mixed-dimensional vdW heterostructure photodiode comprising a 1D tellurium (Te) nanowire and a 2D molybd...
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