The hidden Rashba effect emerges in centrosymmetric rock-salt MTe and improves thermoelectric performance due to the local Te off-centering distortion.

Cyclooxygenase (COX)-2 plays critical roles in tumorigenesis, tumor cell growth, and angiogenesis, and inhibiting the expression of COX-2 by gene therapy has showed promising prospects. Vectors are crucial for gene therapy. Polyamidoamine (PAMAM) dendrimers are one type of nano-vectors. In this study, we synthesized a generation 4 polyamidoamine (G4PAMAM) dendrimer/COX-2 antisense oligodeoxynucleotide complex (G4PAMAM/COX-2ASODN), determined the transfection rate of G4PAMAM/COX-2ASODN on cultured breast cancer cells, assessed the cell viability, cell cycle dynamics, and cell invasiveness after transfection, and investigated the effects of G4PAMAM/COX-2ASODN on the expression of COX-2 mRNA and protein and microvessel density (MVD) levels in the tumor tissues of a breast cancer nude mouse model. The results showed that G4PAMAM/COX-2ASODN had a high transfection rate, decreased the cell viability, induced apoptosis and G0/G1 cell cycle arrest, and suppressed cell invasiveness. After treatment with G4PAMAM/COX-2ASODN, the copy number of COX-2 mRNA and protein expression in the tumor tissue were decreased markedly, MVD in the tumor tissue was also decreased, and tumor growth was restrained (p<0. 05). We conclude that COX-2ASODN can be delivered into the cultured and transplanted breast cancer cells efficiently by G4PAMAM, can reduce the expression of COX-2 mRNA and protein, and can lower the MVD of tumor tissues. The G4PAMAM/COX-2ASODN complex has antitumor properties in vitro and in vivo.

Alloying Ga2O3 with Al2O3 yields diverse structural phases with distinctive optoelectronic properties, making them promising candidates for ultrawide bandgap semiconductors in next-generation power electronics. Yet, there is a lack of sound knowledge of the carrier dynamics in the (AlxGa1−x)2O3 alloys due to their structural complexity. Herein, we focus on the ordered β-(AlxGa1−x)2O3 alloys, predict their carrier mobility, and determine the intrinsic electron mobility limit based on solving linearized Boltzmann transport equations from first principles. The predicted electron mobility for ordered β-(Al0.25Ga0.75)2O3 and β-(Al0.5Ga0.5)2O3 alloys at 300 K, respectively, is 103.6 and 80.60 cm2/V s, demonstrating excellent agreement with literature experiments. Such low electron mobility is limited by the intrinsically strong polar optical phonon (POP) scattering process. As the Al content further increases, the alloy's electron mobility further reduces mainly due to the enlarged Pauling ionicity, Fröhlich coupling constant, and POP scattering. This work provides physical insight into the carrier dynamics in ordered β-(AlxGa1−x)2O3 alloys and seeks to improve the electron mobility for potential applications in high-power electronics.

The exfoliated two-dimensional (2D) Ga2O3 opens new avenues to fine-tune the carrier and thermal transport properties for improving the electro-thermal performance of gallium oxide-based power electronics with their enhanced surface-to-volume...

The microwave (MW) dielectric permittivity of gallium oxide (β-Ga2O3) fundamentally determines its interaction with an electromagnetic wave in bulk power. Yet, there is a lack of experimental data due to limitations of high-temperature MW dielectric measurements and the large uncertainty under variable-temperature conditions. Herein, we develop a deep potential (DP) based on density functional theory (DFT) results and apply deep potential molecular dynamics (DPMD) for accurately predicting temperature-dependent MW dielectric permittivity of β-Ga2O3. The predicted energies and forces by DP demonstrate excellent agreement with DFT results, and DPMD successfully simulates systems up to 1280 atoms with quantum precision over nanosecond scales. Overall, the real part of the MW dielectric permittivity decreases with rising frequency, but the dielectric loss increases. The MW dielectric permittivity gradually increases as the temperature increases, which is closely related to the reduced dielectric relaxation time and increased static and high-frequency dielectric constants. Besides, the oxygen vacancy defects significantly reduce the relaxation time; however, augmenting the defect concentration will cause a slight rise in relaxation time. The electron localization function analysis reveals that more free electrons and low localization of electrons produced by high defect concentrations facilitate the increased relaxation time. This study provides an alternative route to investigate the temperature-dependent MW permittivity of β-Ga2O3, which attains prime importance for its potential applications in RF and power electronics.