The next generation of silicon-based photonic processors and neural and quantum networks need to be adaptable, reconfigurable, and programmable. Phase change technology offers proven nonvolatile electronic programmability; however, the materials used to date have shown prohibitively high optical losses, which are incompatible with integrated photonic platforms. Here, we demonstrate the capability of the previously unexplored material Sb2Se3 for ultralow-loss programmable silicon photonics. The favorable combination of large refractive index contrast and ultralow losses seen in Sb2Se3 facilitates an unprecedented optical phase control exceeding 10π radians in a Mach-Zehnder interferometer. To demonstrate full control over the flow of light, we introduce nanophotonic digital patterning as a previously unexplored conceptual approach with a footprint orders of magnitude smaller than state-of-the-art interferometer meshes. Our approach enables a wealth of possibilities in high-density reconfiguration of optical functionalities on silicon chip.
We present design concepts for optical modulators without using any equalization or bespoke fabrication techniques. The demonstrated silicon photonics transmitter can operate at 100 Gbps OOK, while the power efficiency of the driver is 2.03 pJ/bit.
A controllable transformation from interfacial to filamentary switching mode is presented on a ZrO2/ZrO2 − x/ZrO2 tri-layer resistive memory. The two switching modes are investigated with possible switching and transformation mechanisms proposed. Resistivity modulation of the ZrO2 − x layer is proposed to be responsible for the switching in the interfacial switching mode through injecting/retracting of oxygen ions. The switching is compliance-free due to the intrinsic series resistor by the filaments formed in the ZrO2 layers. By tuning the RESET voltages, controllable and stable multistate memory can be achieved which clearly points towards the capability of developing the next-generation multistate high-performance memory.Electronic supplementary materialThe online version of this article (doi:10.1186/s11671-017-2155-0) contains supplementary material, which is available to authorized users.
An optical device configuration allowing efficient electrical tuning of near total optical absorption in monolayer graphene is reported. This is achieved by combining a two-dimensional gold coated diffraction grating with a transparent spacer and a suspended graphene layer to form a doubly resonant plasmonic structure. Electrical tuneability is achieved with the inclusion of an ionic gel layer which plays the role of the gate dielectric. The underlying grating comprises a 2-dimensional array of inverted pyramids with a triple layer coating consisting of a reflective gold layer and two transparent dielectric spacers, also forming a vertical micro-cavity known as a Salisbury screen. Resonant coupling of plasmons between the gold grating and graphene result in strong enhancement of plasmon excitations in the atomic monolayer. Plasmon excitations can be dynamically switched off by lowering the chemical potential of graphene. Very high absorption values for an atomic monolayer and large tuning range, extremely large electrostatically induced changes in absorption over very small shifts in chemical potential are possible thus allowing for very sharp transitions in the optical behavior of the device. Overall this leads to the possibility of making electrically tunable plasmonic switches and optical memory elements by exploiting slow modes.
The field of silicon photonics has experienced widespread adoption in the datacoms industry over the past decade, with a plethora of other applications emerging more recently such as light detection and ranging (LIDAR), sensing, quantum photonics, programmable photonics and artificial intelligence. As a result of this, many commercial complementary metal oxide semiconductor (CMOS) foundries have developed open access silicon photonics process lines, enabling the mass production of silicon photonics systems. On the other side of the spectrum, several research labs, typically within universities, have opened up their facilities for small scale prototyping, commonly exploiting e-beam lithography for wafer patterning. Within this ecosystem, there remains a challenge for early stage researchers to progress their novel and innovate designs from the research lab to the commercial foundries because of the lack of compatibility of the processing technologies (e-beam lithography is not an industry tool). The CORNERSTONE rapid-prototyping capability bridges this gap between research and industry by providing a rapid prototyping fabrication line based on deep-UV lithography to enable seamless scaling up of production volumes, whilst also retaining the ability for device level innovation, crucial for researchers, by offering flexibility in its process flows. This review article presents a summary of the current CORNERSTONE capabilities and an outlook for the future.
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