Collective molecular physical properties can be enhanced from their intrinsic characteristics by templating at material interfaces. Here we report how a black phosphorous (BP) substrate concatenates a nearly-free-electron (NFE) like conduction band of a C 60 monolayer. Scanning tunneling microscopy reveals the C 60 lowest unoccupied molecular orbital (LUMO) band is strongly delocalized in two-dimensions, which is unprecedented for a molecular semiconductor. Experiment and theory show van der Waals forces between C 60 and BP reduce the inter-C 60 distance and cause mutual orientation, thereby optimizing the π-π wave function overlap and forming the NFE-like band. Electronic structure and carrier mobility calculations predict that the NFE band of C 60 acquires an effective mass of 0.53–0.70 m e ( m e is the mass of free electrons), and has carrier mobility of ~200 to 440 cm 2 V −1 s −1 . The substrate-mediated intermolecular van der Waals interactions provide a route to enhance charge delocalization in fullerenes and other organic semiconductors.

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We reveal the unique electronic characteristics of the conduction band (CB) of black phosphorus (BP) by combining low-temperature scanning tunneling microscopy/spectroscopy (STM/STS), density functional theory calculations, analytic fitting, and model simulations. We discover that the differential conductance spectrum, which represents the local density of states (LDOS) of BP, exhibits a linear character over a large energy range in the unoccupied electronic state region. Combining theoretical calculations, we demonstrate that the linear character right above the conduction band minimum originates from a specific combination of the anisotropic band dispersions of BP's CB. In particular, the wave function of BP's CB possesses a pronounced density between BP layers and extends into the vacuum significantly, which is in sharp contrast to those of adjacent bands. This makes the CB dominate STS signals even when the energy is sufficiently high to involve other bands, and maintains the linearity of the STS spectrum over a wide energy range. The fact that the CB provides linear DOS and possesses pronounced wave function density in BP interlayers provides new insights for engineering the electronic structures and properties of BP and BP based materials.

After the preparation of 2D electronic flat band (EFB) in van der Waals (vdW) superlattices, recent measurements suggest the existence of 1D electronic flat bands (1D‐EFBs) in twisted vdW bilayers. However, the realization of 1D‐EFBs is experimentally elusive in untwisted 2D layers, which is desired considering their fabrication and scalability. Herein, the discovery of 1D‐EFBs is reported in an untwisted in situ‐grown two atomic‐layer Bi(110) superlattice self‐aligned on an SnSe(001) substrate using scanning probe microscopy measurements and density functional theory calculations. While the Bi–Bi dimers of Bi zigzag (ZZ) chains are buckled, the epitaxial lattice mismatch between the Bi and SnSe layers induces two 1D buckling reversal regions (BRRs) extending along the ZZ direction in each Bi(110)‐11 × 11 supercell. A series of 1D‐EFBs arises spatially following BRRs that isolate electronic states along the armchair (AC) direction and localize electrons in 1D extended states along ZZ due to quantum interference at a topological node. This work provides a generalized strategy for engineering 1D‐EFBs in utilizing lattice mismatch between untwisted rectangular vdW layers.

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