I. INTRODUCTIONE FFECTIVE transmission of high-frequency signals is usually achieved by the use of differential lines, that is, two signal wires/traces operated according to a differential signaling scheme. The advantages in terms of electromagnetic compatibility (EMC) properties are several. Namely, a differential line does not theoretically radiate and is ideally immune to external interfering fields, since unwanted common mode (CM) disturbance cancels out at the line terminals [1]. However, in actual differential pairs, the imbalance possibly introduced by uncertainty and tolerances in the manufacturing process [2] as well as by nonideal behavior of circuit components may seriously degrade EMC performance due to undesired conversion of the differential mode (DM) into CM, and vice versa. Namely, DMto-CM conversion is at the basis of unwanted radiated emissions (RE), whereas radiated susceptibility mainly originates from the conversion of the CM noise picked-up from external electromagnetic sources into DM disturbance at the ports of the drivers/receivers connected at the line ends.Due to the relevance of this problem, unbalanced transmission lines (TLs) and mode conversion have been extensively studied both from the theoretical and experimental viewpoints [3]- [13].
the effect of gamma irradiation upon Al/HfO 2 /SiO 2 /Si MOS structure under different doses of 60 Co is studied in this article as a function of total dosage. MOS capacitors with a stacked gate dielectric of 2.8nm thick SiO 2 and 15nm thick HfO 2 having electrode areas of 1mm*1mm are prepared on the p-Si substrate using thermal oxidation and atomic layer deposition respectively. The MOS capacitors are under zero bias during irradiation under 60 Co gamma ray with total dose of 100Krad (Si)/500Krad (Si)/1Mrad (Si) and dose rate of 50rad (Si)/s. The high frequency Capacitor-Voltage (C-V) and Current-Voltage (I-V) characteristic of each structure are measured at room temperature before and after irradiation. As well as the C-V and I-V property, Atomic Force Microscopy (AFM), Grazing Incidence X-ray Diffraction (GIXRD), and Xray Photoelectron Spectroscopy (XPS) are also applied to determine the surface morphology, physical, and mechanical properties before and after different doses of radiation. The oxide trapped charge calculated from the high frequency C-V measurement is in the order of 10 12 cm -2 and increases linearly with the increase of applied total dose. The XRD spectrum exhibits several phases of SiO 2 and HfO 2 variation under each total dose. The XPS result shows that each different total dosage leads to the binding energy peak drifting to a different degree demonstrating the influence of irradiation on the valence state of the elements, which can be attributed to the gamma-ray induced interface states.
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