Self-healing materials arouse much attention because of their recoverable morphologies during (dis)charge. Herein, we report an effective and practical synthesis strategy that can adequately utilize the self-healing feature to achieve advanced integrative performance. The hollow Ga 2 O 3 @nitrogen-doped carbon quantum dot (H-Ga 2 O 3 @N-CQD) nanospheres are synthesized via a facile approach as an anode material for lithium-ion batteries (LIBs). In this anode, the self-healing capability is derived from the Ga generated in the conversion reaction. On account of the feasible structure design and the binding N-CQD coating, the material structure can be well preserved during (dis)charging. As a result, the anode material delivers an initial discharge capacity of 1348.5 mAh g −1 at 0.1 A g −1 and an invertible capacity of 700.5 mAh g −1 under 0.5 A g −1 after 500 cycles. Endowed by the unique structural design, the H-Ga 2 O 3 @N-CQDs can deliver high-current-density circulation performance and long-term cycle stability, which has prospects for large-scale applications in high-energy-density LIBs. Meanwhile, the rational framework design offers new insights into the structurebuilding construction of self-healing materials.
High-performance self-powered photodetectors based on GaN microwire array/Si heterojunctions show a broadband photoresponse with high EQE, responsivity and detectivity at zero bias.
Independent and zero-maintenance systems would be in urgent need in the near future internet of things. Here, we present highperformance, self-driven organic/inorganic heterojunction ultraviolet (UV) photodetectors (PDs) by in situ polymerization of polyaniline (PANI) on Gallium nitride microwires. The GaN microwires with a high crystalline quality are grown on patterned Si substrates by metal organic chemical vapor deposition. Using a facile in situ chemical polymerization method, PANI is conformally coated on the surface of GaN microwires. The constructed GaN/PANI hybrid microwire PD exhibits a high responsivity of 178 mA/W, a remarkable detectivity of 4.67 × 10 14 jones, and an ultrafast UV photoresponse speed (rise time of 0.2 ms and fall time of 0.3 ms) under zero bias. The intimate heterojunction in the form of N−Ga−N bonds between GaN and PANI may account for the observed high performances. The presented self-driven microwire UV PDs featuring ultrahigh-speed (sub-millisecond) response to UV light may find applications in future nano/micro-photosensor networks.
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