We report significant improvements in the electrical characteristics of Si3N4/Si/GaAs capacitors with the assistance of atomic hydrogen during the in situ growth of Si on GaAs. Si3N4/Si/GaAs capacitors have shown a minimum interface state density as low as 3×1010 eV−1 cm−2 as determined by the low-frequency capacitance method. The hysteresis and frequency dispersion in the GaAs metal-insulator-semiconductor capacitor are very small (200 and 100 meV, respectively). These results represent significant advances over previous reports.
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