Semiconducting thin β-FeSi 2 film has been recognized as a novel solar cell material due to its high absorption coefficient. In this study, the effects of emitter on the photovoltaic properties of n-β-FeSi 2 /p-Si were analyzed using AFORS-HET program. The simulation results show that the thickness of emitter affects the conversion efficiency of solar cell, and the short-current density decreases sharply with increasing thickness of emitter. Interface state is another key factor influencing the conversion efficiency of solar cell, which degrades solar cell performance. In order to obtain high efficiency battery, interface state density should be less than 10 11 cm −2 eV.
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