Antiferromagnetic spintronics is a rapidly growing subfield of spintronics in condensed-matter physics and information technology. Electrical current in collinear antiferromagnetic materials is typically spin unpolarized, limiting the realization of antiferromagnetic spintronics effects. Here we study the transport in the collinear antiferromagnetic junctions by applying a transverse electric field $E_y$ to the antiferromagnets. The band structures of the collinear antiferromagnets may become spin-polarized when the combined time reversal and lattice translation symmetry is broken by $E_y$. The separation between spin-up and spin-down bands is controlled by $E_y$.
Full spin polarization originating from spin-polarized states near the band gap's edges is observed at high exchange energy. In particular, as $E_y$ increases, the region capable of generating high spin polarization broadens
due to the increased separation between spin-up and spin-down bands. The amplitude and sign of spin polarization can be controlled by $E_y$. These characteristics indicate that collinear antiferromagnet materials are ideal for future spintronics applications.
Anomalous valley Hall effect (AVHE), which forwards a strategy for combining valleytronics and spin-tronics, has recently attracted much interest. Usually, this effect is associated with the anomalous velocity acquired by the carriers due to the Berry curvature of the Bloch bands. Here we propose a new strategy to generate AVHE in a graphene-based normal/strained/normal junction, where AVHE originates from the spin-valley tunneling asymmetry for the transmission through the junction. When the system is driven by a temperature bias, an anomalous valley Nernst effect is demonstrated, in which the transverse current is completely spin- and valley-polarized simultaneously. In particular, the thermally induced longitudinal charge current can become zero with the finite transverse one, causing the ratio between them to be infinite, which is usually small for the Hall effect. It is expected that our findings could provide potential applications in valleytronics and spintronics.
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