Broadband antireflection (AR) coatings are essential elements for improving the photocurrent generation of photovoltaic modules or the enhancement of visibility in optical devices. In this paper, we report a hybrid nanostructured antireflection coating combination that is a clean and efficient method for fabricating a nanostructured antireflection coating (ARC). A multilayer thin-film was introduced between the ARC and substrate to solve the significant problem of preparing nanostructured ARCs on different substrates. In this way, we rebuilt a gradient refractive index structure and optimize the antireflective property by simply adjusting the moth-eye structure and multilayers. Subwavelength-structured cone arrays were directly patterned using a self-assembled single-layer polystyrene (PS) nanosphere array as an etching mask. Nanostructure coatings exhibited excellent broadband and wide-angle antireflective properties. The bottom-up preparation process and hybrid structural combination have the potential to significantly enhance the broadband and wide-angle antireflective properties for a number of optical systems that require high transparency, which is promising for reducing the manufacturing cost of nanostructured AR coatings.
Indium tin oxide (ITO) thin films have been deposited onto polycarbonate substrates by ion beam assisted deposition technique at room temperature. The structural, optical and electrical properties of the films have been characterized by X-ray diffraction, atomic force microscopy, optical transmittance, ellipsometric and Hall effect measurements. The effect of the ion beam energy on the properties of the films has been studied. The optical parameters have been obtained by fitting the ellipsometric spectra. It has been found that high quality ITO film (low electrical resistivity and high optical transmittance) can be obtained at low ion beam energy. In addition, the ITO film prepared at low ion beam energy gives a high reflectance in IR region that is useful for some electromagnetic wave shielding applications.
Phase separation of InxGa1-xN alloys into Ga-rich and In-rich regions was observed by a number of research groups for samples grown with high indium content, x. Due to the radiation sensitivity of InGaN to beam damage by fast electrons, high-resolution imaging in transmission electron microscopy (TEM) or core-loss electron energy-loss spectroscopy (EELS) may lead to erroneous results. Low-loss EELS can yield spectra of the plasmon loss regions at much lower electron fluxes. Unfortunately, due to their delayed edge onset, the low energetic core losses of Ga and In partially overlap with the plasmon peaks, all of which shift with indium content.Here we demonstrate a method to quantify phase separation in InGaN thin films from the low-loss region in EELS by simultaneously fitting both plasmon and core losses over the energy range of 13-30eV. Phase separation is shown to lead to a broadening of the plasmon peak and the overlapping core losses, resulting in an unreliable determination of the indium concentration from analyzing the plasmon peak position alone if phase separation is present. For x=0.3 and x=0.59, the relative contributions of the binary compounds are negligibly small and indicate random alloys. For xnom.=0.62 we observed strong broadening, indicating phase separation.
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