Silicon‐based photodetectors show attractive prospects due to their convenient preparation, high detectivity, and complementary metal–oxide–semiconductor compatibility. However, they are currently limited by low responsivity and sharp decay at sub‐bandgap wavelength. Although the aforementioned limitation can be partly solved by femtosecond laser processing, the surface defects and carrier activation rates result in a large dark current and narrow spectral response, which are unsatisfactory. Herein, rapid thermal annealing and hydrogenated surface passivation are introduced to elevate the broad‐bandgap responsivity and signal to noise ratio and to suppress the dark current. At optimal conditions, a sub‐bandgap responsivity of 0.80 A W−1 for 1550 nm at 20 V at room temperature is obtained, comparable with commercial germanium photodiodes and much higher than previously reported silicon photodiodes. Moreover, the prepared photodetector responded to spectral range from 400 to 1600 nm, with responsivity reaching 1097.60 A W−1 for 1080 nm at 20 V, which is the highest in reported silicon photodetectors. Simultaneously, the device shows competitive detectivity (1.22 × 1014 Jones at −5 V) due to the post‐processing procedures and suppressed dark current (7.8 μA at −5 V). The results show great prospects for black silicon in infrared light detection, night vision imaging, and fiber‐optic communication.

Knowledge of tumor size, BMI, and tumor type can help in counseling patients undergoing laparoscopic adrenalectomy with regard to the probability of conversion. The size of the tumor was found to be the most important predictor.

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Flexible photodetectors (PDs) prepared with silicon-based materials have received considerable attention for their use in a wide range of portable and wearable applications. In this study, we present the first free-standing flexible PD based on sulfur-hyperdoped ultrathin silicon, which was fabricated using a femtosecond laser in a SF6 atmosphere. It is found that the fabricated device exhibits excellent performance of broadband photoresponse from 400 to 1200 nm, with a peak responsivity of 63.79 A/W @ 870 nm at a low bias voltage of −2 V, corresponding to an external quantum efficiency reaching 9092%, which surpasses most values reported for silicon-based flexible PDs. In addition, the device shows a fast response speed (rise time τr = 68 μs) and stable detection performance with good mechanical flexibility. The high-performance PD described here suggests a promising way in flexible applications for sensors, imaging systems, and optical communication systems.

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