(i) There are significant differences with respect to clinical, biochemical, immunological and virological aspects between ASL-HB and CHB-AF. (ii) Of several diagnostic combinations, IgM anti-HBc jointing HBV-DNA is most effective and most practicable in distinguishing ASL-HB from CHB-AF. (iii) A low HBeAg level is more useful than negative HBeAg in differential diagnosis between ASL-HB and CHB-AF. (iv) In those patients with a high level of IgM anti-HBc, serum AFP level >10x upper reference limit could rule out a probability of ASL-HB.
Flexible fluoroethylenepropylene (FEP) piezoelectret films with a cross-tunnel structure were prepared using a template-based process and contact charging. Energy harvesting from the fabricated FEP films was investigated at various exciting frequencies and load resistances. The results show that the quasi-static piezoelectric d 33 coefficients for the FEP piezoelectret samples are of the order of 1000 pCN -1 at an applied pressure of 3.1 kPa. The output voltage increases with the increase in load resistance, and the output power is dependent on the load resistance and vibration frequency. At a load resistance of 0.9 MΩ and vibration frequency of 650 Hz, the output power of 3.5 μWg -2 was obtained for the sample with an area of 3.14 cm 2 and a seismic mass of 44.1 g. Such thin, light and flexible FEP piezoelectret films may be applied in wearable environmental energy harvesting system.
The explosive development of Internet
of Things and wearable electronics
greatly promotes the exploitation of diverse sensors in which noncontact
proximity sensing is of great significance to perceive diverse information
from the environment and human bodies with no need for physical contact.
In theory, any long-range interactions can be developed to realize
proximity sensing function. In recent years, organic field-effect
transistor-based proximity sensors have been realized in which a charged
object can be regarded as a gate to modulate transistor’s drain
current. However, the low-carrier mobility and shift of threshold
voltage in organic transistors limited their sensing performance.
Herein, we reported a ferroelectric-polarization-enhanced oxide semiconductor
transistor proximity sensor. The polarization state in the ferroelectric
layer was well modulated by poling pulse with different widths. Therefore,
the optimal operation point of the transistor sensor was precisely
controlled by the ferroelectric-polarization-induced shift of the
threshold voltage. Such a ferroelectric-modulated oxide semiconductor
transistor showed obvious sensing performance to the approach of several
common charged objects and presented a much larger current response
than that from organic transistor sensors. As an extended application,
two transistor sensors were configured to realize the velocity measurement
of a charged object.
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