Spin-orbit entangled magnetic dipoles, often referred to as pseudospins, provide a new avenue to explore novel magnetism inconceivable in the weak spin-orbit coupling limit, but the nature of their low-energy interactions remains to be understood. We present a comprehensive study of the static magnetism and low-energy pseudospin dynamics in the archetypal spin-orbit Mott insulator Sr2IrO4. We find that in order to understand even basic magnetization measurements, a formerly overlooked in-plane anisotropy is fundamental. In addition to magnetometry, we use neutron diffraction, inelastic neutron scattering and resonant elastic and inelastic x-ray scattering to identify and quantify the interactions that determine the global symmetry of the system and govern the linear responses of pseudospins to external magnetic fields and their low-energy dynamics. We find that a pseudospin-only Hamiltonian is insufficient for an accurate description of the magnetism in Sr2IrO4 and that pseudospin-lattice coupling is essential. This finding should be generally applicable to other pseudospin systems with sizable orbital moments sensitive to anisotropic crystalline environments.

This article describes growth and characterization of the highest quality reproducible 3C-SiC heteroepitaxial films ever reported. By properly nucleating 3C-SiC growth on top of perfectly on-axis (0001) 4H-SiC mesa surfaces completely free of atomic scale steps and extended defects, growth of 3C-SiC mesa heterofilms completely free of extended crystal defects can be achieved. In contrast, nucleation and growth of 3C-SiC mesa heterofilms on top of 4H-SiC mesas with atomic-scale steps always results in numerous observable dislocations threading through the 3C-SiC epilayer. High-resolution X-ray diffraction (HRXRD) and high resolution cross-sectional transmission electron microscopy (HRXTEM) measurements indicate non-trivial, in-plane, lattice mismatch between the 3C and 4H layers. This mismatch is somewhat relieved in the step-free mesa case via misfit dislocations confined to the 3C/4H interfacial region without dislocations threading into the overlying 3C-SiC layer. These results indicate that the presence or absence of steps at the 3C/4H heteroepitaxial interface critically impacts the quality, defect structure, and relaxation mechanisms of single-crystal heteroepitaxial 3C-SiC films.

A model is presented for a possible mechanism of screw dislocation (including micropipe) nucleation in silicon carbide. The model is based on the observation of micropipe nucleation at the sites of foreign material inclusions using synchrotron white beam x-ray topography and transmission optical microscopy. It is shown that incorporation of the inclusion into the growing crystal can lead to deformation of the protruding ledge which constitutes the overgrowing layer. Accommodation of this deformation into the crystal lattice leads to the production of pairs of opposite sign screw dislocations which then propagate with the growing crystal. Evidence for the existence of such pairs of dislocations is presented.

On-axis and vicinal GaN/AlN/6H-SiC structures grown under identical conditions have been studied by x-ray diffraction and transmission electron microscopy to demonstrate the distinctive features of vicinal surface epitaxy (VSE) of nitrides on SiC. In VSE, the epilayers are tilted from the substrate due to the out-of-plane lattice mismatch (Nagai tilts), and the in-plane mismatch strains are more relaxed. The majority of misfit dislocations (MDs) at the vicinal AlN/6H-SiC interface are found to be unpaired partial MDs that are geometrically necessary to correct the stacking sequences from 6H to 2H. This mechanism indicates that it is possible to develop "step-controlled-epitaxy" strategies to control strain relaxation by adjusting the substrate offcut angles.

A short review is presented of the various synchrotron white beam x-ray topography (SWBXT) imaging techniques developed for characterization of silicon carbide (SiC) crystals and thin films. These techniques, including back-reflection topography, reticulography, transmission topography, and a set of section topography techniques, are demonstrated to be particularly powerful for imaging hollow-core screw dislocations (micropipes) and closed-core threading screw dislocations, as well as other defects, in SiC. The geometrical diffraction mechanism commonly underlying these imaging processes is emphasized for understanding the nature and origins of these defects. Also introduced is the application of SWBXT combined with high-resolution x-ray diffraction techniques to complete characterization of 3C/4H or 3C/6H SiC heterostructures, including polytype identification, 3C variant mapping, and accurate lattice mismatch measurements.

We demonstrate high-geometrical-resolution imaging of dislocations in 4H-SiC by monochromatic synchrotron topography ͑but still under the "integrated wave" condition͒. In back-reflection topographs, 1c screw dislocation images are "magnified" to appear as well-defined circular white spots, while basal plane dislocations with opposite edge Burgers vector components exhibit two distinct kinds of contrast features. All the dislocation images are precisely described by ray-tracing simulations. This imaging technique provides an accurate, comprehensive, and nondestructive characterization tool, which is needed by current SiC researchers is used for industrial applications. It also provides a simple picture for understanding the mechanisms underlying synchrotron diffraction imaging of defects.

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