This paper presents an experimental study of the dynamic and static characteristics of SiC Power MOSFETs in a total ionizing dose radiation environment. Their relationship has also been studied. Furthermore, the factors and mechanisms that affect the switching characteristics of SiC
Power MOSFET in a total dose radiation environment are discussed. The change of switching characteristics of SiC VDMOS induced by radiation depends not only on the trapped charge accumulated at the interface and gate oxide above the channel but is also strongly dependent on the parasitic capacitance
of the device. The former causes the negative shift of the threshold voltage to decrease the turn-on time and increase the turn-off time, while the latter increases both the turn-on time and turn-off time. The results of the study show that the static and dynamic performance of SiC power MOSFET
must be considered simultaneously in the total dose radiation damage assessment and radiation hardening. Namely, the static characteristic represented by the threshold voltage and the dynamic characteristic represented by the turn-off time.
The effects of 10 MeV proton irradiation on the threshold voltage and gate oxide reliability of SiC MOSFET are investigated. The negative shift of the threshold voltage was observed after irradiation, and the magnitude of the shift is exclusively related to the fluence and not the drain
voltage. Moreover, proton irradiation leads up to the degeneration of oxide reliability. Experiment and simulation results indicate that the shift of the threshold voltage is caused by the total ionizing dose effect. Due to the superior blocking capabilities of the SiC MOSFET, the electric
field of gate oxide is almost unaffected by the voltage applied to the drain, so the drift of threshold voltage is only related to particle fluence. The single event effect is responsible for the degradation of gate oxide reliability. The single event effect induces a transient high electric
field in the gate oxide, which generates defects and affects the reliability of the gate oxide.
The total ionizing dose (TID) radiation effect of silicon carbide metal oxide semiconductor field-effect transistors (SiC MOSFETs) was investigated at different dose rates. The influence of irradiation dose rate on the transfer characteristic curves of the devices was investigated.
And the threshold voltage, oxide trap charge, interface state, and peak transconductance et al. were further extracted based on the transfer curve. The results show that the degradation degree of irradiated devices varies at different dose rates due to the different factors. The degradation
of the device at high dose rate is due to the radiation-induced oxide trap charge in the gate oxide layer, while the reason of the degradation at low dose rate is the radiation-induced oxide trap charges and interface state simultaneously, which have opposite effects on the devices, and the
degradation degree depends on the competition between the two.
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