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Abstract. Agile method use in information systems development (ISD) has grown dramatically in

In this large nationally representative sample of the oldest-old in China, the prevalence of disability during the 3 years prior to death is high and is greater in women than men and those who die at the oldest ages.

We determined the genotypes of seven Bacillus anthracis strains that were recovered from nine anthrax outbreaks in North-East China from 2010 to 2014, and two approved vaccine strains that are currently in use in China. The causes of these cases were partly due to local farmers being unaware of the presence of anthrax, and butchers with open wounds having direct contact with anthrax-contaminated meat products. The genotype of five of the seven recovered strains was A.Br.001/002 sub-lineage, which was concordant with previously published research. The remaining two cases belongs to the A.Br.Ames sub-lineage. Both of these strains displayed an identical SNR pattern, which was the first time that this genotype was identified in North-East China. Strengthening education in remote villages of rural China is an important activity aimed at fostering attempts to prevent and control anthrax. The genotype of the vaccine strain Anthrax Spore Vaccine No.II was A.Br.008/009 and A.Br.001/002 for the vaccine strain Anthrax Spore Vaccine Non-capsulated. Further studies of their characteristics are clearly warranted.

A Si–SiO2–MgO device showing nonvolatile resistive switching effect is fabricated. It is observed the resistance of the device changed from high value to low value at a certain transition voltage after being stimulated by a large current. In addition, the transition voltage shifts reproducibly under a reversed large current. By applying a reading voltage in the range of the transition voltages, nonvolatile resistive switching phenomena with on/off ratio of about 10, endurance of more than 200 cycles and retention of more than 104 s is obtained. More importantly, it is also observed that the magnetic field could shift the transition voltage to higher values, affecting or even suppressing the resistive switching. The magnetic field controllable nonvolatile resistive switching effect in the silicon device suggested by this work may be helpful to the silicon based industry.