The pure and Al-doped NiO nanorod-flowers with uniform sizes and well-defined morphologies were synthesized for the first time by a facile solvothermal reaction. As the gas sensing materials of MOS gas sensors, their sensing properties were investigated systematically. The results indicated that the 2.15 at% Al-doped NiO nanorod-flowers showed improved gas sensing properties compared to those of pure NiO nanorod-flowers. The incorporation of Al ions with NiO nanocrystals adjusts the carrier concentration, and induces the change of the oxygen deficiency and chemisorbed oxygen of NiO nanorod-flowers. Thus, the doping of Al 3+ into NiO nanorod-flowers should be a promising method for designing and fabricating the high performance gas sensor.

Urchinlike CuO modified by reduced graphene oxide (rGO) was synthesized by a one-pot microwave-assisted hydrothermal method. The as-prepared composites were characterized using various characterization methods. A humidity sensor based on the CuO/rGO composites was fabricated and tested. The results revealed that the sensor based on the composites showed much higher impedance than pure CuO. Compared with the sensors based on pristine rGO and CuO, the sensor fabricated with the composites exhibited relatively good humidity-sensing performance in terms of response time and response value. The humidity-sensing mechanism was also briefly introduced. The enlargement of the impedance and improvement of the humidity-sensing properties are briefly explained by the Schottky junction theory.

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