NiO films are prepared with radio frequency magnetron sputtering. Ellipsometric experiment results show that NiO film is transparent for visible light,and its refractive index can be modified by changing Tsub and annealing temperature. Scanning electron microscopy and X-ray diffraction experiment results show that Tsub and annealing temperature can modify the morphology and crystal structure of NiO film which can further modify the conductivity of NiO. The optimized NiO film is used in polymer solar cell (PSC) as an anode blocking layer. The experimental results show that NiO is a better candidate than the PEDOT:PSS often used as an anode blocking layer for PSC. The power conversion efficiency of PSC with NiO reaches 2.26% which is three times as high as that with PEDOT:PSS.
The influence of the major compensating defects As antisites (AsGa) and Mn interstitials (MnI) in the Ga0.946Mn0.054As diluted magnetic semiconductor (DMS) were studied by X-ray absorption spectra (XAS). The experimental results show that the defects in Ga0.946Mn0.054As grown at lower temperature (TS=200℃) is mainly AsGa, but at TS>230℃ MnI is the major defects. On the other hand, a higher LT-annealing temperature (250℃) can remove MnI out of the Ga0.946Mn0.054As lattice, and the highest Curie temperature (TC=130 K) is reached. Moreover, it is indicated that the LT-annealing process can increase the number of MnGa atoms by reducing the concentration of AsGa defects and driving MnI defects to fill up the holes left by AsGa.
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