Research on two-dimensional (2D) materials has been explosively increasing in last seventeen years in varying subjects including condensed matter physics, electronic engineering, materials science, and chemistry since the mechanical exfoliation of graphene in 2004. Starting from graphene, 2D materials now have become a big family with numerous members and diverse categories. The unique structural features and physicochemical properties of 2D materials make them one class of the most appealing candidates for a wide range of potential applications.In particular, we have seen some major breakthroughs made in the field of 2D materials in last five years not only in developing novel synthetic methods and exploring new structures/properties but also in identifying innovative applications and pushing forward commercialisation. In this review, we provide a critical summary on the recent progress made in the field of 2D materials with a particular focus on last five years. After a brief background 物理化学学报 Acta Phys. -Chim. Sin. 2021, 37 (12), 2108017 (3 of 151) introduction, we first discuss the major synthetic methods for 2D materials, including the mechanical exfoliation, liquid exfoliation, vapor phase deposition, and wet-chemical synthesis as well as phase engineering of 2D materials belonging to the field of phase engineering of nanomaterials (PEN). We then introduce the superconducting/optical/magnetic properties and chirality of 2D materials along with newly emerging magic angle 2D superlattices. Following that, the promising applications of 2D materials in electronics, optoelectronics, catalysis, energy storage, solar cells, biomedicine, sensors, environments, etc. are described sequentially. Thereafter, we present the theoretic calculations and simulations of 2D materials. Finally, after concluding the current progress, we provide some personal discussions on the existing challenges and future outlooks in this rapidly developing field.

Integrating the self-healing property with the shapememory effect is a strategy that extends the service lifetime of shape-memory materials. However, this strategy is inadequate to reshape and recycle through the self-healing property or liquidstate remoldability. For more types of damage, solid-state plasticity is needed as a complementary mechanism to broaden the reprocessing channels of smart materials. In this study, multifunctional thermoplastic polyureas cross-linked by urea hydrogen bonds are prepared, which possess the multipathway remodeling property. The shape transition can be triggered after heating above 65 °C. The synergistic effect of dynamic disulfide bonds and hydrogen bonds causes the thermoplastic polyureas to possess characteristics similar to those of associative covalent adaptable networks. Thus, the polyureas can repair the damage or reconfigure the shape at 75 °C in 15 min by solid-state plasticity, instead of going into a viscous flow state. Soft grippers with various shapes are prepared by integration of solid-state plasticity, and the structure and function of the grippers can be repaired. The integration of solid-state plasticity and the self-healing property broadens the paths of shape-memory polymers in recyclability and reshapability.

P-type and n-type top-gate carbon nanotube thin-film transistors (TFTs) can be selectively and simultaneously fabricated on the same polyethylene terephthalate (PET) substrate by tuning the types of polymer-sorted semiconducting single-walled carbon nanotube (sc-SWCNT) inks, along with low temperature growth of HfO thin films as shared dielectric layers. Both the p-type and n-type TFTs show good electrical properties with on/off ratio of ≈10 , mobility of ≈15 cm V s , and small hysteresis. Complementary metal oxide semiconductor (CMOS)-like logic gates and circuits based on as-prepared p-type and n-type TFTs have been achieved. Flexible CMOS-like inverters exhibit large noise margin of 84% at low voltage (1/2 V = 1.5 V) and maximum voltage gain of 30 at V of 1.5 V and low power consumption of 0.1 μW. Both of the noise margin and voltage gain are one of the best values reported for flexible CMOS-like inverters at V less than 2 V. The printed CMOS-like inverters work well at 10 kHz with 2% voltage loss and delay time of ≈15 μs. A 3-stage ring oscillator has also been demonstrated on PET substrates and the oscillation frequency of 3.3 kHz at V of 1 V is achieved.