In this paper, a series of Eu3+/Tb3+ doped La3Ga5SiO14 (LGS: Eu3+, Tb3+) phosphors with excellent performance have been synthesized by high-temperature solid-phase method. The effects of Eu3+ and Tb3+ doping...
We synthesized Dy3+ doped SrLaGa3O7 phosphors via a sintering process at 1350 °C under atmosphere. The X-ray diffraction data demonstrate that they have the pure tetragonal phase, meaning the successful substitution of Dy3+ in SrLaGa3O7 host. Monitoring at 572 nm, Dy3+ doped SrLaGa3O7 phosphors show a series of excitation bands within 275–475 nm. Exciting at 342 nm, Dy3+ doped SrLaGa3O7 phosphors show emission bands in the range of 450–700 nm. The emission bands respectively locate in blue, yellow and right light regions, which respectively correspond to 4F9/2 → 6H15/2, 4F9/2 → 6H13/2 and 4F9/2 → 6H11/2 transitions of Dy3+. The concentration quenching is induced by dipole-dipole interactions among neighboring Dy3+ ions. There is only one peak in the thermoluminescence glow curves of Dy3+ doped SrLaGa3O7 phosphors, indicating that there is only one type of trap center in these phosphors. The trap depth is calculated to be 0.754 eV.
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