Neuromorphic computing based on a non‐von Neumann architecture is a promising way for the efficient implementation of artificial intelligence. A neuromorphic computing system is mainly composed of artificial synapses and neurons. Various electronic neuromorphic devices have been developed by different technologies. Neuromorphic photonics combines the efficiency of neural networks and the speed of photonics to build computing systems. Compared with their electronic counterparts, photonic neurons and synapses have the potential advantages of ultrafast operation speed, large bandwidth, and no electrical interconnect power loss, inherent to the computing by optical means. Therefore, photonic neuromorphic devices are attracting more and more attention. This work reviews the recent advances in the development of photonic synapses. Both purely photonic synapses and photoelectric synapses are described. Their structures and working mechanisms are discussed in detail.

Hybrid Oxide Memristive Synapses Oxygen Ion Migration Multilayers of Oxides and Other Materials Multilayers of OxidesElement-Doped Oxides Composite Oxides Other hybrid Oxides Metal Ion Migration Carrier Trapping Oxygen Ion Migration Metal Ion Migration Carrier Trapping Oxygen Ion Migration Metal Ion Migration

In the semiconductor industry, one of the most important steps in the development of electronic devices is the discovery of electrode materials that are suitable for ohmic contact. As a newly found type of 2D materials, MXenes have been explored as materials for use in field effect transistors (FETs) with promising performances, which urges for the underlying mechanisms to be understood. In this work, the behaviors of the 5-10 nm device models for monolayer blue phosphorene (BlueP) and MoS 2 with a MXene electrode are investigated using ab initio quantum transport simulations. Firstly, the interfacial properties of BlueP and MoS 2 in contact with M 3 C 2 T 2 (M = Ti, Zr, or Hf; T = F, OH, or O) MXene are studied. The results show that OH and some of the F functionalized MXenes form an n-type ohmic contact with BlueP or MoS 2 , while the O functionalized MXenes form a p-type ohmic contact with BlueP and MoS 2 . Accordingly, when the FET model is built with M 3 C 2 (OH) 2 electrodes, these FETs exhibit high on-currents due to the ohmic contacts with subthreshold swing between 100 ∼ 200 mV/decade, and high on/off ratios up to 10 6 at a bias voltage of 0.5 V. Our results imply that a FET with a sub-10 nm channel length can satisfy the requirements of both high performance and low power logic applications. The results from this study indicate that MXenes may act as the appropriate electrode for high-performance BlueP and MoS 2 FETs, which may provide new clues to guide the application of various 2D materials in electronics.

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