This paper presents a detailed analysis of the yield of embedded static random access memories (eSRAM) which are generated using a compiler. Defect and fault analysis inclusive of industrial data are presented for these chips by taking int o accotmt the design constructs (referred to as kernels) and the physical properties of the layout. The new tool CAYA (Compiler-based Array Yield Analysis) is based on a characterization of the design process which accounts for fault types and the relation between functional and structural faults; a novel empirical model is proposed to facilitate the yield calculation. Industrial data is provided for the analysis of various configurations with different structures and redundancy. The effectiveness and accuracy as provided by CA YA are assessed with respect to industrial designs.
It has been challenging to achieve combined strong magnetoelectric coupling and narrow ferromagnetic resonance (FMR) linewidth in multiferroic heterostructures. Electric field induced large effective field of 175 Oe and narrow FMR linewidth of 40 Oe were observed in FeCoSiB/Si/SiO2/PMN-PT heterostructures with substrate clamping effect minimized through removing the Si substrate. As a comparison, FeCoSiB/PMN-PT heterostructures with FeCoSiB film directly deposited on PMN-PT showed a comparable voltage induced effective magnetic field but a significantly larger FMR linewidth of 283 Oe. These multiferroic heterostructures exhibiting combined giant magnetoelectric coupling and narrow ferromagnetic resonance linewidth offer great opportunities for integrated voltage tunable RF magnetic devices.
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