Good quality and fine grain Bi 6 Fe 2 Ti 3 O 18 magnetic ferroelectric films with single-phase layered perovskite structure have been successfully prepared via metal organic decomposition (MOD) method. Results of low-temperature magnetocapacitance measurements reveal that an ultra-low magnetic field of 10 Oe can produce a nontrivial magnetodielectric (MD) response in zero-field-cooling condition, and the relative variation of dielectric constants in magnetic field is positive, i.e., [ε r (H)-ε r (0)]/ε r (0)=0.05, when T<55K, but negative with a maximum of [ε r (H)-ε r (0)]/ε r (0)=-0.14 when 55K
Materials with full spin polarization that exhibit zero net magnetization attract great scientific interest because of their potential applications in spintronics. Here, the structural, magnetic and electronic properties of a C1
b
-ordered FeMnGa alloy are reported using first-principles calculations. The results indicate that the corresponding band structure exhibits a considerable gap in one of the spin channels and a zero gap in the other thus allowing for high mobility of fully spin-polarized carriers. The localized magnetic moments of Fe and Mn atoms have an antiparallel arrangement leading to fully compensated ferrimagnetism, which possesses broken magnetic inversion symmetry. Such magnetic systems do not produce dipole fields and are extremely stable against external magnetic fields. Therefore, this will improve the performance of spintronic devices. Using this principle, similar band dispersion and compensated magnetic moments were predicted in a C1
b
-ordered FeMnAl0.5In0.5 Heusler alloy.
In this paper, noncollinear antiferromagnets Mn3.1Sn0.9 and Mn2.5Cr0.6Sn0.9 with an Ni3Sn-type hexagonal structure has been synthesized. An exchange bias (EB) from 5 K to room temperature has been observed in Mn2.5Cr0.6Sn0.9 with a maximum EB field of 3166 Oe at 5 K, which decreases gradually to 60 Oe at 300 K. It is proposed that the EB is ascribed to the exchange anisotropy between the ferromagnetic component and the antiferromagnetic host due to the magnetic inhomogeneity of the materials. Large anomalous Hall effect ranging from 3.5 to 1 µΩ · cm persists from 5 K to 300 K, which is attributed to the non-vanishing Berry phase arising from the non-collinear spin structure. Both the exchange bias and anomalous Hall effect in a wide temperature range of 5–300 K suggest that the Mn–Cr–Sn alloy has a promising application prospect in antiferromagnetic based spintronics devices.
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