Two different structures of unloaded and loaded electromagnetic bandgaps (EBG) are proposed. The models of the unloaded and loaded unit structures are derived by equivalent circuit approach and full-wave electromagnetic simulation is used for extracting the values of the lumped elements in the circuit. A band-stop filter (BSF) has been designed with flat response at a selected frequency by cascading the unit EBG structures. The EBG filter is fabricated on high resistivity silicon substrate employing a microelectromechanical systems (MEMS) surface micromachining process. The measurement results for the loaded EBG reveals a 20 dB stop-band with a bandwidth of 13.2 GHz. The lower and the higher pass-band insertion losses are less than 2 dB and 4.5 dB, respectively. EBG band-stop filters fabricated by the MEMS process have immense potential to be integrated with CMOS devices owing to compactness and low cost.
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