Submicron metallic lateral spin valves are fabricated with AlO x tunnel junctions as spin injection and detection barriers. The spin polarization is estimated to be ϳ20%, determined by both Hanle effect and variations of device dimensions. The polarization is maintained at a large dc injection current density Ͼ2 ϫ 10 6 A / cm 2 . Both the spin polarization and spin diffusion length are weakly temperature dependent.
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