GaN p-i-n solar PV structures grown by rf plasma assisted molecular beam epitaxy (MBE) produce high performance IV characteristics with a leakage current density of less than 1×10−4 mA cm−2 at 0.1 V forward bias and an on-resistance of 0.039 Ω cm2. Leakage current measurements taken for different size diodes processed on the same sample containing the solar cells reveal that current density increases with diode area, indicating that leakage is not a large function of surface leakage along the mesa. Nonannealed Pt/Au Ohmic p-contacts produce a contact resistivity of 4.91×10−4 Ω cm−2 for thin Mg doped contact layers with sheet resistivity of 62196 Ω/◻. Under concentrated sunlight the cells produce an open-circuit voltage of 2.5 V and short circuit currents as high as 30 mA cm−2. Multiple growths comprised the study and on each wafer the IV curves representing several diodes showed considerable variation in parasitic leakage current density at low voltages on some wafers and practically no variation on others. It appears that a smaller grain size within the GaN thin film accounts for higher levels of dark current.