In this paper we report on the successful integration of a 90nm low-k full VIA-first dual damascene process architecture using carbon-doped-oxide (CDO) and S i c etchstop-layer (ESL). One of the key features of the integration scheme is that the effects of photoresist poisoning have been eliminated by optimization of the low-k (k< 3.0) film stack deposition process. The mechanisms underlying photoresist poisoning have been investigated through detailed partition studies. Electrical yield and reliability data will be shown to demonstrate the performance of the overall integration approach.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.