The control of exciton and triondynamics in bilayer MoS2 is demonstrated, via the comodulations by both temperature and electric field. The calculations here show that the band structure of bilayer MoS2 changes from indirect at room temperature toward direct nature as temperature decreases, which enables the electrical tunability of the K-K direct PL transition in bilayer MoS2 at low temperature.

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This article investigated the microstructure of Ti6Al4V that was fabricated via selective laser melting; specifically, the mechanism of martensitic transformation and relationship among parent β phase, martensite (α’) and newly generated β phase that formed in the present experiments were elucidated. The primary X-ray diffraction (XRD), transmission electron microscopy (TEM) and tensile test were combined to discuss the relationship between α’, β phase and mechanical properties. The average width of each coarse β columnar grain is 80–160 μm, which is in agreement with the width of a laser scanning track. The result revealed a further relationship between β columnar grain and laser scanning track. Additionally, the high dislocation density, stacking faults and the typical (10true1¯1) twinning were identified in the as-built sample. The twinning was filled with many dislocation lines that exhibited apparent slip systems of climbing and cross-slip. Moreover, the α + β phase with fine dislocation lines and residual twinning were observed in the stress relieving sample. Furthermore, both as-built and stress-relieved samples had a better homogeneous density and finer grains in the center area than in the edge area, displaying good mechanical properties by Feature-Scan. The α’ phase resulted in the improvement of tensile strength and hardness and decrease of plasticity, while the newly generated β phase resulted in a decrease of strength and enhancement of plasticity. The poor plasticity was ascribed to the different print mode, remained support structures and large thermal stresses.

The residual stress in a multilayer ceramic capacitor (MLCC) has been evaluated by two‐dimensional finite element simulation in combination with X‐ray diffraction measurement. It is shown that there is a compressive in‐plane stress in the active layers of the MLCC, which increases with increases in the number of dielectric layers when both dielectric layer thickness and electrode thickness are kept constant. A good order of magnitude agreement between the residual stresses obtained from two approaches is found. The ɛ–V response of the MLCC with different number of dielectric layers demonstrates that under a given or no applied field, the dielectric permittivity increases with increasing compressive stress. Additionally, under dc bias field, the higher the compressive in‐plane stress existing in the MLCC, the more significant the decrease of the dielectric permittivity. These results can be explained through a phenomenological thermodynamic model, including both elastic and electrostatic energy, based on the Ginsburg–Landau–Devonshire theory.