To expand the unchartered materials space of lead‐free ferroelectrics for smart digital technologies, tuning their compositional complexity via multicomponent alloying allows access to enhanced polar properties. The role of isovalent A‐site in binary potassium niobate alloys, (K,A)NbO3 using first‐principles calculations is investigated. Specifically, various alloy compositions of (K,A)NbO3 are considered and their mixing thermodynamics and associated polar properties are examined. To establish structure‐property design rules for high‐performance ferroelectrics, the sure independence screening sparsifying operator (SISSO) method is employed to extract key features to explain the A‐site driven polarization in (K,A)NbO3. Using a new metric of agreement via feature‐assisted regression and classification, the SISSO model is further extended to predict A‐site driven polarization in multicomponent systems as a function of alloy composition, reducing the prediction errors to less than 1%. With the machine learning model outlined in this work, a polarity‐composition map is established to aid the development of new multicomponent lead‐free polar oxides which can offer up to 25% boosting in A‐site driven polarization and achieving more than 150% of the total polarization in pristine KNbO3. This study offers a design‐based rational route to develop lead‐free multicomponent ferroelectric oxides for niche information technologies.
To further our understanding of how complex anisotropic structure-property relationships may be rationalized by their local atomic arrangements in ferroelectric materials, using the newly-found metastable monoclinic P m phase of...
To meet the increasing demand for environment-friendly, high-performance energy devices, sodium niobate (\ce{NaNbO3}) is considered one of the most promising lead-free antiferroelectric (AFE) oxide perovskites for such green energy storage...
Layered group-IV monochalcogenides, including GeS, GeSe, SnS, and SnSe, garner attention because of their anisotropic structures and properties. Here, we report on the growth of GeS microribbons via chemical vapor transport (CVT), which affords each of them with a low-symmetry orthorhombic structure and anisotropic optical and electronic properties. The single-crystalline nature of the GeS microribbon, which has a typical thickness of ~30 nm, is confirmed. Polarized Raman spectra reveal angle-dependent intensities that are attributed to the anisotropic layered structure of GeS microribbons. The photoluminescence (PL) spectra reveal a peak at ~1.66 eV. The angle-dependent PL and anisotropic absorption spectroscopy results provide evidence for a distinct anisotropic optical transition near the energy band edges; this phenomenon is also predicted by our density functional theory (DFT)-based calculations. Strong in-plane direct-current transport anisotropy is observed under dark and white illumination by using back-gate cross-shaped field effect transistors (CSFETs) fabricated with the GeS microribbon; significant gate-tunable conductivity is also confirmed. The strong anisotropy is further confirmed by the DFT-calculated effective mass ratio. Our findings not only support the application of GeS microribbons in anisotropic photoelectronic transistors but also provide more possibilities for other functional device applications.
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