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We prepared resistive switching Al-AlO x multilayered junctions and observed considerably improved endurance properties. The mechanism of the observed resistance switching basically reflects the filament model. The temperature dependence of the transport in each resistance state revealed additional features, that is a well-defined thermal activation behavior in the high-resistance state is not observed in the layered device and the metallic conduction in the low-resistance state is not affected. The improved endurance properties are discussed in terms of the increased effective number of active regions, where the Reset and Set processes probably occur before a permanent dielectric breakdown.

Metallic nanostructures that act as electrical switches between bistable resistance states are created electrically in an insulating amorphous niobium oxide thin film. The physical formation of the metallic nanostructures are probed using in situ focused ion beam scanning electron microscopy equipped with a current-voltage measurement system. While the electroforming process changes the film, dramatically inducing metallic nanochannels across it, significant changes in the film do not occur during repeated resistance switching afterward. A qualitative resistive switching model is proposed taking into account the gradual forming process.

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Real-needle acupuncture therapy on Zhubin (KI9) showed effectiveness in reducing alcohol craving. These results strongly suggest the usefulness of acupuncture therapy on Zhubin (KI9) in preventing a relapse in alcohol dependent patients.

We have observed unipolar-type resistance switching in an ultrathin niobium oxide film. An analysis of the temperature dependence of the resistance switching transport revealed that low-resistance state showed a type of electrical conduction typically observed in metals. The modification in chemical binding states of the film in different resistance states was studied using x-ray photoelectron spectroscopy. The analysis of XPS showed that metallic suboxides NbOδ (δ ≪ 2), decomposed from some of Nb2O5 and NbO2 components of the film, were created after electroforming process, suggesting that the metallic suboxides are constituting elements of metallic channels in the low resistance state.

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