Abstract— The integration of carbon‐nanotube (CNT) emitters with a metal‐oxide‐semiconductor field‐effect transistor (MOSFET) can stabilize and control the emission current of CNTs. CNTs were grown by using the resist‐assisted patterning (RAP) process and plasma‐enhanced chemical vapor deposition (PECVD) and were connected to the drain part of an external MOSFET. The electron‐emission current of CNTs was switched by applying a low gate voltage to the MOSFET, and the switching current was very stable because the MOSFET was operated in the saturation region. Based on these results, the emission current of CNTs was stabilized and switched by using a low‐voltage‐driven MOSFET.
The integration of carbon nanotube (CNT) emitters with metaloxide-semiconductor field-effect transistor (MOSFET) can stabilize and control the emission current of carbon nanotubes (CNTs). As the unit process, the CNTs were grown on the drain part of MOSFETs using the resist-assisted patterning (RAP) process. The electron emission current of CNTs grown on the drain was switched with a low voltage of the externally connected field-effect transistor and was uniform. The electron emission properties of CNT-emitters with the externally connected fieldeffect transistor were discussed.
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