High voltage IGBTs up to 1500V are widely used in consumer power applications. The introduction of the FieldStop® technology in combination with a trench gate structure brought improvements in terms of conduction losses and switching losses. Additionally, the integration of powerful reverse diode structure led to Infineon's reverse conducting (RC) technology and offers further platform for new IGBT devices. New voltage classes of RC-IGBTs are proposed in this paper, which bring benefits to the application such as low EMI or high efficiency. This paper discusses new devices for soft-switching applications such as induction cooking, microwave ovens and rice cookers in 600V, 900V, 1000V, 1200V and 1600V.
A bipolar structure with an estimated f~ of 5 GHz is fabricated on a selective epitaxial layer. A shallow buried layer (0.25 pm-0.50 pm) is formed by diffusing arsenic atoms from an arsenic implanted polysilicon layer. The polysilicon layer is removed by converting it to oxide and etching the oxide. The defective regions at the edges of the selective epitaxial layer are removed by a plasma etch step to form defect-free basecollector junctions; the junctions can be placed less than 2 p m from the edges without degrading the device characteristics. Using the selective epitaxial growth, LOCOS isolation, and the shallow buried layer, semi-dielectric transistor isolation is achieved.
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