Tin oxide was deposited by using vacuum thermal method on silicon wafer engraved by Computer Numerical Controlled (CNC) Machine. The inscription was engraved by diamond-made brine. Deep 0.05 mm in the form of concentric squares. Electrical results in the dark were shown high value of forward current and the high value of the detection factor from 6.42 before engraving to 10.41 after engraving. (I-V) characters in illumination with powers (50, 100, 150, 200, 250) mW/cm2 show Improved properties of the detector, Especially at power (150, 200, 250) mW/cm2. Response improved in rise time from 2.4 μs to 0.72 μs and time of inactivity improved 515.2 μs to 44.2 μs. Sensitivity angle increased at zone from 40o to 65o.
In this study, a liquid crystal display LCD cell was prepared. with the windows made from a thin film of SnO2 add to it Bi2O3 by weight (0,1,3,5,7)% .The effect of adding optical and electrical properties of the cell was studied. The thin film was prepared by vacuum evaporation technique. It was added to use powder mixing technique. The results showed a decrease in the value of the current passing through the cell and an increase in resistance value from 9.7MΩ to 12.5MΩ. The results also showed an increase in the cell's ability to control the light and darkness it with lower voltages by increasing the add rate. This leads to a decrease power used of a single cell. The value of the capacitance is not affected by the addition of Bi2O3 and was stable at ( 3nf ±1% ).
In this study, bismuth element was added to the weight ratio of (0,1,3,5)% to tin element using powdered technology method. The thin film of (SnO2)1-X(Bi2O3)X have been prepared with a vacuum evaporation system and oxidized him in oven with temperature at 350° C for 30 min. Results (I-V) Characters with temperature showed that the thin film had a negative thermal resistance factor, while the results showed that the resistance value of the thin film increased from 1KΩ at (0%) to 7.5 KΩ at (5%). The thin film 's sensitivity to heat has also improved significantly. The energy activation decreased from 0,08eV at the addition (0%) to 0,03 eV at the addition of (3%)while increased to 0.087 eV at the addition of (5%) .
This study investigated the optical and structural properties of the (ZnO) membrane, which is prepared by the method of thermal steaming in the vacuum by using the closed oven on glass platforms at room temperature. The crystallization of the membranes prepared by X-ray diffraction pattern was diagnosed. The membranes were found to be polymorphic with hexagonal structure and crystal direction (002), the membranes were annealed for (5,15,25) min at (510°C),the results showed the increased height of peaks with their intensity and decreases in the optical gap energy. The study of optical properties also included the recording of both the absorption spectra and the permeability spectrum of the prepared membranes at the wavelength range (250-1100) nm, Also, the rest of the optical constants were calculated as functions of the photon energy, including (absorption coefficient, extinaction cofficient), Where the value of the absorption coefficient for ZnO thin films varies from (1.4 cm-1 to 2.09cm-1), and the value of extinaction coefficient varies from (0.6 to 0.38). Transmission spectra showed highly transparent films with band gap energy varies ranging from 3.47ev to 3.3 eV.
In this study we oxidation thin film of Zinc on glass substrate in 510oC and oxidation time (10,20,30)sec . we intrusion the Zinc by using thermal diffusion. we exchange oven by appliance heater. the result show possibility relatively zinc oxide without using oxygen gas or closed oven and relatively so fast .this path is applied in production industrially and for large quantity. spectral analysis and elements analysis EDX explicit conversion zinc to zinc oxid purity 99% in oxidation time 30 sec . X-Ray analysis show that zinc oxid have Crystal system in crystal planes (002) and (101) .and AFM analysis show average nano dimension is 61.37nm .the study of optical properties clarifies the conversion. the result of energy gap for allow direct transmission 3.22eV and the energy gap for forbidden transmission 3.18eV .
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