We present the design and fabrication of a phenanthrenequinone-doped poly(methyl methacrylate) photopolymer material. Large blocks of samples were made, and the material showed negligible shrinkage after optical exposures. We recorded and reconstructed 250 holograms at a single spot, using a 1-cm(3) block.

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The photoproducts in phenanthrenequinone (PQ)-dissolved methyl methacrylate (MMA) liquid samples and PQ-doped poly(methyl methacrylate) (PQ/PMMA) solid photopolymer samples have been analyzed by various chemical measurements. A mechanism for holographic recording in our PQ/PMMA photopolymer is proposed. By UV-VIS transmission and photoluminescence spectral measurements, we find that under light exposure the molecular structure of PQ is transformed to be less conjugated. The measured results of mass spectra, Fourier transform infrared spectra, NMR spectra, and gel permeation chromatograph analyses provide some evidence for recognizing the molecular structure of the photoproducts in our PQ/PMMA photopolymers. The results show that under light exposure the PQ and MMA form new molecules, mainly an adduct of one PQ molecule with one MMA molecule. In addition, PQ also reacts as a photoinitiator to form PMMA oligomers in our samples. The structure change of the PQ molecule induces a strong change of the refractive index in the material. It provides a mechanism to record a phase hologram in our PQ/PMMA photopolymer. Holographic recordings in the samples are demonstrated, and the dynamic range of the sample is investigated.

p-Phenediamino-modified graphene (PDG) has been newly synthesized via a facile green one-step chemical route as a functionalized graphene-based additive to copolymerize with aniline for fabricating innovative PDG/polyaniline conducting polymer composites containing very special semi-interpenetrating networks (S-IPNs). The S-IPNs not only provide additional pathways by creating chemically bonded PDG and PANI for smoothly transporting carriers but greatly reduce the amount of graphene required to less than a few percent could effectively improve the overall electrical conductivity, Seebeck coefficient, and thus the thermoelectric (TE) performance. The found optimized TE figure of merit (ZT) of 0.74 approaches a practical high level which is comparable or much higher than previously reported ones for TE polymers.

A comparative analysis of phenanthrenequinone-doped poly(methyl methacrylate) materials fabricated at California Institute of Technology and National Chiao Tung University is performed in order to understand the dierences exhibited in their recording and baking dynamics. Ó 2001 Published by Elsevier Science B.V.Keywords: Holography; Photopolymer material; PQ-PMMA; Grating dynamics; Temperature eect Phenanthrenequinone-(PQ-) doped poly(methyl methacrylate) (PMMA) [1,2] has been used as a recording material in optical memories and other holographic systems [3±6]. This material consists of a polymeric basis doped with chromophores, the PQ molecules. This material is lightweight and durable, and does not suer from shrinkage. High optical quality samples of dierent shapes and thicknesses can be obtained. These properties make it an excellent candidate for holographic memory modules. In this paper, we compare the PQ±PMMA samples that we use at California Institute of Technology (Caltech) with those fabricated at National Chiao Tung University (NCTU) and try to understand the dierences in behavior they exhibit.Sample preparation consists of dissolving PQ molecules ( 6 0.7%) in liquid methyl methacrylate (MMA) together with azo-bis-isobutyrolnitrile, a polymerization thermal initiator. This solution is poured into molds and allowed to polymerize in a pressure chamber. The preparation process followed at Caltech diers from the one followed at NCTU in the temperature at which the pressure chamber is set during polymerization. For the Caltech material, the temperature of the chamber is set to 80°C. On the other hand, at NCTU the polymerization process is split into two steps [4,7]. First, the solution is let to rest at room temperature for approximately 120 h until the solution turns homogeneously viscid. At this point, the

Controlling the polymerization of aniline in the presence of zirconium-based metal–organic frameworks (Zr-MOFs) using polystyrene sulfonic acid as a dopant resulted in the formation of a new type of free-standing thermoelectric composite film. Polyaniline chains interpenetrate into the Zr-MOFs to enhance the crystallinity of polyaniline, resulting in an improved degree of electrical conductivity. In addition, the inherent porosity of the Zr-MOFs functions to suppress the increase in thermal conductivity, thus dramatically promoting a negative Seebeck coefficient. When 20 wt % Zr-MOF was used, a power factor of up to 664 μW/(m K2) was obtained, which was accompanied by a surprisingly large, negative Seebeck coefficient. The new class of MOF-based composites offers a new direction for developing new types of efficient thermoelectric materials.

A series of 2,8‐disubstituted dibenzothiophene and 2,8‐disubstituted dibenzothiophene‐S,S‐dioxide derivatives containing quinoxaline and pyrazine moieties are synthesized via three key steps: i) palladium‐catalyzed Sonogashira coupling reaction to form dialkynes; ii) conversion of the dialkynes to diones; and iii) condensation of the diones with diamines. Single‐crystal characterization of 2,8‐di(6,7‐dimethyl‐3‐phenyl‐2‐quinoxalinyl)‐5H‐5λ6‐dibenzo[b,d]thiophene‐5,5‐dione indicates a triclinic crystal structure with space group P1 and a non‐coplanar structure. These new materials are amorphous, with glass‐transition temperatures ranging from 132 to 194 °C. The compounds (Cpd) exhibit high electron mobilities and serve as effective electron‐transport materials for organic light‐emitting devices. Double‐layer devices are fabricated with the structure indium tin oxide (ITO)/Qn/Cpd/LiF/Al, where yellow‐emitting 2,3‐bis[4‐(N‐phenyl‐9‐ethyl‐3‐carbazolylamino)phenyl]quinoxaline (Qn) serves as the emitting layer. An external quantum efficiency of 1.41 %, a power efficiency of 4.94 lm W–1, and a current efficiency of 1.62 cd A–1 are achieved at a current density of 100 mA cm–2.

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