The aim of this work was to build a thermodynamic energy band diagram for the system of n-type Si͑100͒/HF that is in dynamic equilibrium at the interface. The construction concept was based on the shift of energy levels such as Fermi energy (E F ), conduction band energy (E c ), and valence band energy (E v ) before and after the contact of silicon with HF solutions. Through measurements of the open-circuit potential and flatband voltage (V FB ), the energy band diagram for the Si/HF system was established. This diagram was useful in estimating the activation energy for the photoelectrochemical etching system. The kinetic study demonstrated that the etching rate of the silicon increases to a maximum with an increase in HF concentration from 0.5 to 2.0 M, then decreases with further increase of the HF concentration. Based on the energy band diagram established and the electrochemical kinetic data measured, we discuss in detail the etching rate of the n-Si/HF and make clear the concentration effect of HF on the photoelectrochemical reaction.
In this study, Indium Tin Oxide thin film composite nano silver film was used to replace the positive silver gate-like electrodes commonly use by silicon solar cells. The study aimed to increasing the area of light absorption for silicon solar cells thereby enhance the solar cell optoelectronic conversion efficiency. The experiment adopted sol-gel solution containing phosphorus which was used as the source of phosphorus dopant. The solution was spin-coated on single crystal silicon, followed by high temperature annealing to form p-n junction. This substrate was coated with nano silver film of different thicknesses, while the coating of Indium Tin Oxide with thickness of 450nm was used as the front electrode, to increase solar cell efficiency. The study proposed an appropriate thickness of nano silver film which could effectively improve the diode properties of components and provide better efficiency for solar cells with such structure.
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