A novel 4T-cell based duplication redundancy SRAM is proposed for SEU radiation hardening applications. The memory cell is designed with a 65-nm low leakage process; the operation principle and the SEU radiation hardening mechanism are discussed in detail. The SEE characteristics and failure mechanism are also studied with a 3-D device simulator. The results show that the proposed SRAM structure exhibits high SEU hardening performance with a small cell size.
Abstract.A novel mono-stable 4T-SRAM cell is proposed in this paper. The cell is designed in 65nm LPCMOS process and simulated to find out the linear energy transfer threshold of SEU. T-CAD simulation results show that its LET th for data(1) is up to 41.6 MeV/mg/cm 2 , almost the same as DICE, and the data error rate can be reduce to 1.2×10 -11 /bit.day with a particular duplication redundancy SRAM structure. The proposed 4T cell takes advantage of small cell size and solid anit-SEU ability, showing good potential to be used in SEU hardened SRAM.
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