Effect of SnO 2 addition on the crystal structure/ microstructure and the related microwave dielectric properties of the Ba 2 Ti 9 O 20 were systematically investigated. Incorporation of SnO 2 markedly stabilized the phase constituent and microstructure for the Ba 2 Ti 9 O 20 such that high quality materials can be obtained in a much wider processing window. The sintered density of the Ba 2 Ti 9 O 20 increased linearly, but the microwave dielectric constant (K) decreased monotonically, with the SnO 2 doping concentration. The quality factor (Qxf) of the materials increased firstly due to the addition of SnO 2 , but decreased slightly with further increase in SnO 2 content. The best microwave dielectric properties obtained are K =38.5 and Qxf= 31,500 GHz, which occurs for the 0.055 mol SnO 2 -doped and 1350°C/4 h sintered samples. These properties are markedly better than those for undoped materials (K=38.8 and Qxf=26,500 GHz).
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.