The positive bias thermal stress (PBTS), negative bias thermal stress (NBTS) and negative bias illumination stress (NBIS) stabilities of dual gate amorphous-indium-gallium-zinc-oxide (a-IGZO) thin film transistors via applying different top gate voltage is concentrated in this paper. These dual gate devices show better PBTS/NBTS stress stabilities (smaller ΔV th shift) than conventional bottom gate TFT device. Additionally, these dual gate devices also exhibits better NBIS stress results than conventional bottom gate TFT device.
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