To identify susceptibility loci for ankylosing spondylitis, we performed a two-stage genome-wide association study in Han Chinese. In the discovery stage, we analyzed 1,356,350 autosomal SNPs in 1,837 individuals with ankylosing spondylitis and 4,231 controls; in the validation stage, we analyzed 30 suggestive SNPs in an additional 2,100 affected individuals and 3,496 controls. We identified two new susceptibility loci between EDIL3 and HAPLN1 at 5q14.3 (rs4552569; P = 8.77 × 10(-10)) and within ANO6 at 12q12 (rs17095830; P = 1.63 × 10(-8)). We also confirmed previously reported associations in Europeans within the major histocompatibility complex (MHC) region (top SNP, rs13202464; P < 5 × 10(-324)) and at 2p15 (rs10865331; P = 1.98 × 10(-8)). We show that rs13202464 within the MHC region mainly represents the risk effect of HLA-B*27 variants (including HLA-B*2704, HLA-B*2705 and HLA-B*2715) in Chinese. The two newly discovered loci implicate genes related to bone formation and cartilage development, suggesting their potential involvement in the etiology of ankylosing spondylitis.

Well-aligned ZnO nanowire arrays with a long length of more than 40 microm were prepared successfully by using the polyethylenimine (PEI)-assisted preheating hydrothermal method (PAPHT). Several important synthetic parameters such as PEI content, growth time, preheating time and zinc salt concentration were found to determine the growth of ultralong ZnO nanowire arrays, including length, diameter, density and alignment degree. The photoluminescence (PL) spectrum of as-grown ultralong ZnO nanowire arrays revealed a UV emission and a yellow emission, which was attributed to the absorbed hydroxyl group based on the peak shift after annealing in various atmospheres. The performance of dye-sensitized solar cells (DSSCs) increased with increasing length of ZnO nanowire arrays, which was mainly ascribed to the aggrandized photocurrent and reduced recombination loss according to electrochemical impedance spectroscopy (EIS). A maximum efficiency of 1.3% for a cell with a short-circuit current density (J(sc)) = 4.26 mA cm(2), open-circuit voltage (V(oc)) = 0.69 V and (fill factor) FF = 0.42 was achieved with a length of 40 microm.

Well-aligned ultralong ZnO nanorod arrays with a length of 10 microm have been synthesized on glass substrates using a preheating hydrothermal method. The diameter of the nanorods is in the range from 50 to 80 nm, and the aspect ratio and alignment can be simply controlled by varying the preheating time. Based on the evolution of aspect ratio with preheating time, a possible growth mechanism was proposed. X-ray diffraction (XRD) and scanning electron microscopy (SEM) show that the nanostructures are well oriented with the c-axis perpendicular to the substrate. The photoluminescence (PL) spectrum of the as-grown ZnO nanostructure reveals a near-band-edge (NBE) emission peak and a yellow emission, and the origin of yellow emission was confirmed to be from the absorbed hydroxyl group. The ultralong nanorod arrays made in solution have a desirable diameter, length, density and orientation for ordered nanodevice applications.

TiO 2 nanoparticle-based dye-sensitized solar cells (DSSCs) were modified by depositing a layer of a long-persistent phosphor, SrAl 2 O 4 :Eu 2+ ,Dy 3+ , on top of the TiO 2 nanoparticle layer to prepare working electrodes of the DSSCs. SrAl 2 O 4 :Eu 2+ ,Dy 3+ red-shifted the short UV wavelengths into the main absorption range of the dye commonly used in DSSCs. The SrAl 2 O 4 :Eu 2+ ,Dy 3+ layer also acted as a light-scattering layer to reduce the loss of visible light. Incident photon to current conversion efficiency measurements showed that the application of such phosphor materials enhanced light-harvesting. The open-circuit voltage was found to be higher in the modified DSSCs. The electrons produced by the SrAl 2 O 4 :Eu 2+ ,Dy 3+ particles contribute to the reduction of I 3 − to I − , leading to a lower I 3 − concentration in the electrolyte. This reduces the recapture of electrons injected in the conduction band of TiO 2 by triiodide ions and promotes the open circuit voltage. The performance of the modified DSSC device was improved compared with the cell using a working electrode without this phosphor layer. An overall 13% improvement in conversion efficiency of modified DSSCs was achieved due to the presence of the phosphor layer.