This paper presents a novel structure of Integrated SiC MOSFETs with a high-frequency transformer (I-SiC-HFT) for various high-power isolated DC–DC converters. Several resonant converters are considered for integration in this paper, including the phase-shift full-bridge (PSFB) converter, inductor–inductor–capacitor (LLC) resonant converter, bidirectional PSFB converter, and capacitor–inductor–inductor–capacitor (CLLC) resonant converter. The applications of I-SiC-HFT are focused on V2G EV battery charging systems, energy storage in DC and AC microgrids, and renewable energy systems. SiC devices, including MOSFETs, Schottky diodes, and MOSFET modules, are used in this novel structure of I-SiC-HFT. The high-frequency magnetic structure uses distributed ferrite cores to form a large central space to accommodate SiC devices. The optimized architecture of I-SiC-HFT and heatsink structure is proposed for thermal management of SiC devices. To prove the concept, a small-scale 1.5 kW prototype I-SiC-HFT is used to demonstrate the basic structure and various performance indicators through the FEM based electromagnetic simulation and DC–DC converter experiments.
A solid state transformer(SST), when combined with a conventional back-to-back converter, is superior to a lowfrequency transformer in terms of weight and price, while the efficiency remains the same as that of a low frequency transformer. These attributes of SST make it an attractive choice for offshore wind turbine system to transfer high power to the transmission grid. The main focus of this paper is to design ten 200kW unidirectional full bridge modular DC-DC converter with ten 100kHz modular HF transformer in the PLECS platform and subsequently append the modular DC-DC converter with 3-level and 9-level NPC (Neutral point converter) converters to prove that 2MW energy can be transferred from offshore wind turbine systems(WTS) to MV grid efficiently.
This paper presents a novel and compact structure of integrated silicon-carbide (SiC) Schottky diodes with highfrequency (HF) transformer. A prototype HF transformer in the shape that is similar to a tokamak is designed for the integration with SiC Schottky diodes. The modular-based unique structure of HF transformer can be designed and optimised for the integration with various SiC devices. The three-dimensional (3-D) finite element method (FEM) simulation technique is used to design and analyse the magnetic structure of HF transformer taking into account the space for SiC devices. The experimental results including the HF transformer itself and SiC Schottky diodes integrated with HF transformer are presented.
This paper presents a novel and compact structure which integrates silicon-carbide (SiC) Schottky diodes within a high-frequency (HF) transformer. The proposed structure would reduce the volume of a power converter and in turn the system to which it is applied. It would also greatly reduce the leakage inductances of an HF transformer as well as the inductive electromagnetic interference (EMI) to surrounding components and devices. A prototype HF transformer shaped much like a torus is designed for integration with SiC Schottky diodes. The three-dimensional (3D) finite element method (FEM) simulation technique is used to design and analyze the magnetic structure of the HF transformer including the space reserved for the SiC Schottky diodes. Experimental results are presented for both the HF transformer as a separate component and as a system integrated with SiC Schottky diodes.
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