In neural system, both spike-timing-dependent plasticity (STDP) and conditioned reflex are vital synaptic learning mechanisms to regulate advanced neural activities, being associated with temporally coupled stimuli. Thus, realization of STDP and conditioned reflex on a single solid-state device may open up new opportunities for neuromorphic engineering. Here, restickable chitosan-gated oxide neuromorphic transistors are fabricated on polyimide tape. Based on protonic electrochemical doping/de-doping processes at indium-tin-oxide/chitosan interfaces, four types of STDP learning rules are successfully demonstrated, including Hebbian STDP, anti-Hebbian STDP, symmetrical STDP, and visual STDP. Trained with Hebbian STDP, Pavlovian associative learning and extinction behaviors are demonstrated successfully on a single-oxide neuromorphic transistor. No complex device circuits are needed. It is interesting to note here that the devices can be pasted on different holders with different curvature radii without degrading the transistor performances and STDP learning rules. Moreover, the proposed oxide neuromorphic transistors can be dissolved in deionized water easily. The results here indicate potential applications of the proposed restickable oxide neuromorphic transistors in flexible neuromorphic cognitive platforms.
Recently, environment-friendly electronic devices are attracting increasing interest. "Green" artificial synapses with learning abilities are also interesting for neuromorphic platforms. Here, solution-processed chitosan-based polysaccharide electrolyte-gated indium tin oxide (ITO) synaptic transistors are fabricated on polyethylene terephthalate substrate. Good transistor performances against mechanical stress are observed. Short-term synaptic plasticities are mimicked on the proposed ITO synaptic transistor. When applying presynaptic and postsynaptic spikes on gate electrode and drain electrode respectively, spike-timing-dependent plasticity function is mimicked on the synaptic transistor. Transitions from sensory memory to short-term memory (STM) and from STM to long-term memory are also mimicked, demonstrating a "multistore model" brain memory. Furthermore, the flexible ITO synaptic transistor can be dissolved in deionized water easily, indicating potential green neuromorphic platform applications.
Emulation
of dendrite integration on brain-inspired hardware devices
is of great significance for neuromorphic engineering. Here, solution-processed
starch-based electrolyte films are fabricated, demonstrating strong
proton gating activities. Starch gated oxide dendrite transistors
with multigates are fabricated, exhibiting good electrical performances.
Most importantly, dendrite modulation, spatiotemporal dendrite integration,
and linear/superlinear dendrite algorithm are demonstrated on the
proposed dendrite transistor. Furthermore, a low energy consumption
of ∼1.2 pJ is obtained for triggering a synaptic response on
the dendrite transistor. Accordingly, the signal-to-noise ratio is
still as high as ∼2.9, indicating a high sensitivity of ∼4.6
dB. Such artificial dendrite transistors have potential applications
in brain-inspired neuromorphic platforms.
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