Surface reaction probabilities of silicon hydride radicals are correlated from measurements of the film thickness profile in trench and the deposition rate in thermal chemical vapor deposition of the SiH 4 /H 2 system at 871-913 K. Correlated radical reactive sticking probability RSC rd increases linearly with the fraction of dangling bond φ. Experimental data of RSC rd vs φ in SiH 4 / H 2 and SiH 4 /Ar systems fall on the same line when the deposition temperature is the same. The extrapolated RSC rd at φ ) 1 of the SiH 4 /H 2 system is unity, which indicates that radicals deposit as soon as they impinge on the surface that contains only bare Si atoms. The growing surface reactivity is less than 1 owing to chemisorbed hydrogen. The silicon surface is more passivated in the SiH 4 /H 2 system, compared with the SiH 4 /Ar system, since molecular hydrogen (sticking coefficient 3.57 × 10 -6 ) enhances the hydrogen coverage. The radical reaction probability on a hydrogen-saturated Si surface is the RSC rd value extrapolated at φ ) 0. The activation energy for radical reaction probability with hydrogen-saturated surface is 4.91 ( 0.06 kcal. CRESLAF simulation results, using this revised surface reaction mechanism and the gas-phase reaction mechanism of Ho, Coltrin, and Breiland, indicate the influences of radicals originate from H 2 -SiSiH 2 , since its concentration is much higher than other radical species.
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