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The BaZrSi O :Cr phosphors were prepared by a high temperature solid state method. Their structures were confirmed with XRD and their luminescence properties were investigated. Under excitation at 455 nm, BaZrSi O :Cr phosphors exhibited a broad near infrared emission band peaked at 800 nm, which was assigned to the T → A transition of Cr . The near infrared emission intensity reached a maximum at Cr concentration of 0.7%. There was a concentration quenching phenomenon of Cr in BaZrSi O matrix and the corresponding concentration quenching mechanism was investigated. With efficient near infrared emission in the range of 700-1000 nm, BaZrSi O :Cr phosphors may find applications in solar energy conversion.

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