This paper presents high-Q embedded passives on a multilayer liquid crystalline polymer (M-LCP)-based substrate for a low-profile, compact, mixed-signal system integration with high performance. A low loss and a low water absorption are advantages of LCP. It is also lower-cost material than other high-frequency materials such as low-temperature cofired ceramic (LTCC) due to its compatibility to printed wiring board (PWB) process. Low loss characteristics of LCP provide high-Q passives such as inductors, capacitors, and matching networks. Seventy-six inductors and sixteen capacitors were characterized from three different 9 in 12 in multilayer LCP panels. Two different locations from each board were chosen to preliminarily validate the large panel process of the M-LCP substrate. The highest quality factor (Q) of 164 was achieved with 2.55 nH at 5.05 GHz. The inductors range from 1.45 to 23.11 nH and Qs range from 43 to 164. Inductors in various embedded layers were characterized for realization of 3-D integration in multilayer LCP substrate for multiband applications. To remove the parasitics from pads and interconnections, a two-step de-embedding technique was applied. The model-tohardware correlations are presented in this paper. Twelve 3-D capacitors were also designed and characterized, which provide more than double the capacitance of standard capacitors. Low-loss filters and baluns at 5 GHz were simulated and measured using the designed high-Q passives. The designed high-Q embedded passives on M-LCP-based substrates provide a systematic 3-D integration method for achieving low-profile, high-performance, and compact modules.Index Terms-Embedded passives, high-, liquid crystalline polymer (LCP), multilayer, three-dimensional (3-D) integration.
Demand for off-chip bandwidth has continued to increase. It is projected by the Semiconductor Industry Association in their International Technology Roadmap for Semiconductors that by the year 2015, the chip-to-substrate area-array input-output interconnects will require a pitch of 80 μm. Compliant off-chip interconnects show great potential to address these needs. G-Helix is a lithography-based electroplated compliant interconnect that can be fabricated at the wafer level. G-Helix interconnects exhibit excellent compliance in all three orthogonal directions, and can accommodate the coefficient of thermal expansion (CTE) mismatch between the silicon die and the organic substrate without requiring an underfill. Also, these compliant interconnects are less likely to crack or delaminate the low-k dielectric material in current and future integrated circuits. The interconnects are potentially cost effective because they can be fabricated in batch at the wafer level and using conventional wafer fabrication infrastructure. In this paper, we present an integrative approach, which uses interconnects with varying compliance and thus varying electrical performance from the center to the edge of the die. Using such a varying geometry from the center to the edge of the die, the system performance can be tailored by balancing electrical requirements against thermomechanical reliability concerns. The test vehicle design to assess the reliability and electrical performance of the interconnects is also presented. Preliminary fabrication results for the integrative approach are presented and show the viability of the fabrication procedure. The results from reliability experiments of helix interconnects assembled on an organic substrate are also presented. Initial results from the thermal cycling experiments are promising. Results from mechanical characterization experiments are also presented and show that the out-of-plane compliance exceeds target values recommended by industry experts. Finally, through finite element analysis simulations, it is demonstrated that the die stresses induced by the compliant interconnects are an order of magnitude lower than the die stresses in flip chip on board (FCOB) assemblies, and hence the compliant interconnects are not likely to crack or delaminate low-k dielectric material.
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