The Malaysian Government has set an ambitious target to achieve a higher penetration of Renewable Energy (RE) in the Malaysian energy mix. To date, Malaysia has approximately 2% of its energy coming from RE generation sources compared to the total generation mix and targets achieving 20% penetration by 2025. The current energy mix for Malaysia power generation is mainly provided by natural gas and coal. The discussion will cover the traditional sources of generation including natural gas, coal and big hydro stations. In addition, the paper will cover in depth the potential of RE in the country, challenges, and opportunities in this sector. This study can give an initial evaluation of the Malaysian energy industry, especially for RE and can initiate further research and development in this area in order to support the Government target to achieve RE target of 20% by 2025.

The influence of Molybdenum diselenide (MoSe2) as an interfacial layer between Cu(In,Ga)Se2 (CIGS) absorber layer and Molybdenum (Mo) back contact in a conventional CIGS thin-film solar cell was investigated numerically using SCAPS-1D (a Solar Cell Capacitance Simulator). Using graded bandgap profile of the absorber layer that consist of both back grading (BG) and front grading (FG), which is defined as double grading (DG), attribution to the variation in Ga content was studied. The key focus of this study is to explore the combinatorial effects of MoSe2 contact layer and Ga grading of the absorber to suppress carrier losses due to back contact recombination and resistance that usually occur in case of standard Mo thin films. Thickness, bandgap energy, electron affinity and carrier concentration of the MoSe2 layer were all varied to determine the best configuration for incorporating into the CIGS solar cell structure. A bandgap grading profile that offers optimum functionality in the proposed configuration with additional MoSe2 layer has also been investigated. From the overall results, CIGS solar cells with thin MoSe2 layer and high acceptor doping concentration have been found to outperform the devices without MoSe2 layer, with an increase in efficiency from 20.19% to 23.30%. The introduction of bandgap grading in the front and back interfaces of the absorber layer further improves both open-circuit voltage (VOC) and short-circuit current density (JSC), most likely due to the additional quasi-electric field beneficial for carrier collection and reduced back surface and bulk recombination. A maximum power conversion efficiency (PCE) of 28.06%, fill factor (FF) of 81.89%, JSC of 39.45 mA/cm2, and VOC of 0.868 V were achieved by optimizing the properties of MoSe2 layer and bandgap grading configuration of the absorber layer. This study provides an insight into the different possibilities for designing higher efficiency CIGS solar cell structure through the manipulation of naturally formed MoSe2 layer and absorber bandgap engineering that can be experimentally replicated.

<span style="font-size: 9pt; font-family: 'Times New Roman', serif;">Renewable Energy (RE) penetration is a new phenomenon in power systems. In the advent of high penetration of RE in the systems, several issues have to be addressed especially when it involves the stability and flexibility of the power systems. Battery Energy Storage System (BESS) has gained popularity due to its capability to store energy and to serve multiple purposes in solving various power system concerns. Additionally, several BESS can be combined to operate as Virtual Power Plant (VPP). This study will involve the design and implementation of BESS for five potential customer sites for the demonstration project and to be possibly integrated into one VPP system. The study is expected to demonstrate bill savings to the customers with BESS due to peak demand reduction and energy arbitrage savings.</span><table class="MsoNormalTable" style="width: 444.85pt; border-collapse: collapse; border: none; mso-border-alt: solid windowtext .5pt; mso-yfti-tbllook: 1184; mso-padding-alt: 0in 5.4pt 0in 5.4pt; mso-border-insideh: .5pt solid windowtext; mso-border-insidev: .5pt solid windowtext;" width="593" border="1" cellspacing="0" cellpadding="0"><tbody><tr style="mso-yfti-irow: 0; mso-yfti-firstrow: yes; mso-yfti-lastrow: yes; height: 63.4pt;"><td style="width: 290.6pt; border: none; border-top: solid windowtext 1.0pt; mso-border-top-alt: solid windowtext .5pt; padding: 0in 5.4pt 0in 5.4pt; height: 63.4pt;" valign="top" width="387"><p class="MsoNormal" style="margin-top: 6.0pt; text-align: justify;"><span style="font-size: 9.0pt; color: black; mso-bidi-font-style: italic;">Renewable Energy (RE) penetration is a new phenomenon in power systems. In the advent of high penetration of RE in the systems, several issues have to be addressed especially when it involves the stability and flexibility of the power systems. Battery Energy Storage System (BESS) has gained popularity due to its capability to store energy and to serve multiple purposes in solving various power system concerns. Additionally, several BESS can be combined to operate as Virtual Power Plant (VPP). This study will involve the design and implementation of BESS for five potential customer sites for the demonstration project and to be possibly integrated into one VPP system. The study is expected to demonstrate bill savings to the customers with BESS due to peak demand reduction and energy arbitrage savings.</span></p></td></tr></tbody></table>

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The effect of Mo thin film deposition power in DC sputtering on the formation of a MoSe2 interfacial layer grown via the annealing of CIGSe/Mo precursors in an Se-free atmosphere was investigated. A Mo layer was deposited on glass substrates using the DC magnetron sputtering method. Its electrical resistivity, as well as its morphological, structural, and adhesion characteristics, were analyzed regarding the deposition power. In the case of thinner films of about 300 nm deposited at 80 W, smaller grains and a lower volume percentage of grain boundaries were found, compared to 510 nm thick film with larger agglomerates obtained at 140 W DC power. By increasing the deposition power, in contrast, the conductivity of the Mo film significantly improved with lowest sheet resistance of 0.353 Ω/square for the sample deposited at 140 W. Both structural and Raman spectroscopy outputs confirmed the pronounced formation of MoSe2, resulting from Mo films with predominant (110) orientated planes. Sputtered Mo films deposited at 140 W power improved Mo crystals and the growth of MoSe2 layers with a preferential (103) orientation upon the Se-free annealing. With a more porous Mo surface structure for the sample deposited at higher power, a larger contact area developed between the Mo films and the Se compound was found from the CIGSe film deposited on top of the Mo, favoring the formation of MoSe2. The CIGSe/Mo hetero-contact, including the MoSe2 layer with controlled thickness, is not Schottky-type, but a favourable ohmic-type, as evaluated by the dark I-V measurement at room temperature (RT). These findings support the significance of regulating the thickness of the unintentional MoSe2 layer growth, which is attainable by controlling the Mo deposition power. Furthermore, while the adhesion between the CIGSe absorber layer and the Mo remains intact, the resistance of final devices with the Ni/CIGSe/Mo structure was found to be directly linked to the MoSe2 thickness. Consequently, it addresses the importance of MoSe2 structural properties for improved CIGSe solar cell performance and stability.